Inventor · disambiguated record
Eisuke Tokumitsu
Also filed as: TOKUMITSU EISUKE
5 granted patents·4 pending applications·29 citations·filing 1997–2024
74Inventor score
Top patents by PatentIndex Score
9 records- 0179US9123752B2Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet headJAPAN SCIENCE & TECH AGENCY·Filed 2014·Granted Sep 1, 2015·4 cites·9 claims
- 0261US5822239AMethod of writing data to a single transistor type ferroelectric memoryTOKYO INST TECH·Filed 1997·Granted Oct 13, 1998·23 cites·3 claims
- 0360US9876067B2Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic deviceJAPAN SCIENCE & TECH AGENCY·Filed 2014·Granted Jan 23, 2018·1 cites·25 claims
- 0460US9293257B2Solid-state electronic device including dielectric bismuth niobate film formed from solutionJAPAN SCIENCE & TECH AGENCY·Filed 2012·Granted Mar 22, 2016·1 cites·11 claims
- 0556US2024250145A1Ferroelectric film, manufacturing method therefor, and electronic componentMURATA MANUFACTURING CO·Filed 2024·Application pending·0 cites
- 0651US2023246040A1Variable electronic element and circuit deviceMURATA MANUFACTURING CO·Filed 2023·Application pending·0 cites
- 0747US9202895B2Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet headSHIMODA TATSUYA·Filed 2011·Granted Dec 1, 2015·0 cites·6 claims
- 0841US2016016813A1Oxide layer and production method for oxide layer, as well as capacitor, semiconductor device, and microelectromechanical system provided with oxide layerJAPAN SCIENCE & TECH AGENCY·Filed 2014·Application pending·0 cites
- 0939US2014339550A1Laminated structure, ferroelectric gate thin film transistor, and ferroelectric thin film capacitorJAPAN SCIENCE & TECH AGENCY·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →