Inventor · disambiguated record
Elgin Quek
Also filed as: QUEK ELGIN · QUEK ELGIN K B · QUEK ELGIN KIOK B · QUEK ELGIN KIOK BOONE
152 granted patents·26 pending applications·2,334 citations·filing 1995–2020
99Inventor score
Files withCHARTERED SEMICONDUCTOR MFG65GLOBALFOUNDRIES SG PTE LTD65TOH ENG HUAT20TAN SHYUE SENG9TAN SHYUE SENG JASON3
Top patents by PatentIndex Score
178 records- 0198US7592270B2Modulation of stress in stress film through ion implantation and its application in stress memorization techniqueCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Sep 22, 2009·58 cites·32 claims
- 0297US8492235B2FinFET with stressorsTOH ENG HUAT·Filed 2010·Granted Jul 23, 2013·29 cites·19 claims
- 0397US8440533B2Self-aligned contact for replacement metal gate and silicide last processesTOH ENG HUAT·Filed 2011·Granted May 14, 2013·33 cites·9 claims
- 0497US7867835B2Integrated circuit system for suppressing short channel effectsCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted Jan 11, 2011·116 cites·20 claims
- 0597US6300177B1Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materialsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 9, 2001·175 cites·26 claims
- 0696US9673388B2Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 6, 2017·16 cites·20 claims
- 0796US7169675B2Material architecture for the fabrication of low temperature transistorCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Jan 30, 2007·164 cites·49 claims
- 0896US6461900B1Method to form a self-aligned CMOS inverter using vertical device integrationCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 8, 2002·141 cites·22 claims
- 0995US8502279B2Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substratesTOH ENG HUAT·Filed 2011·Granted Aug 6, 2013·24 cites·21 claims
- 1094US6747314B2Method to form a self-aligned CMOS inverter using vertical device integrationCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jun 8, 2004·93 cites·11 claims
- 1194US6313008B1Method to form a balloon shaped STI using a micro machining technique to remove heavily doped siliconCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Nov 6, 2001·90 cites·30 claims
- 1293US10424568B1Image sensor with stacked SPAD and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Sep 24, 2019·10 cites·17 claims
- 1393US9431497B2Transistor devices having an anti-fuse configuration and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Aug 30, 2016·15 cites·20 claims
- 1493US8368127B2Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive currentGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Feb 5, 2013·23 cites·16 claims
- 1593US6946349B1Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknessesCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Sep 20, 2005·113 cites·20 claims
- 1693US6632712B1Method of fabricating variable length vertical transistorsCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Oct 14, 2003·89 cites·31 claims
- 1792US8889494B2FinfetTOH ENG HUAT·Filed 2010·Granted Nov 18, 2014·14 cites·17 claims
- 1892US8748271B2LDMOS with improved breakdown voltageTOH ENG HUAT·Filed 2011·Granted Jun 10, 2014·13 cites·12 claims
- 1991US9583168B1Drive current enhancement for integrated circuit memory structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 28, 2017·14 cites·13 claims
- 2091US6406945B1Method for forming a transistor gate dielectric with high-K and low-K regionsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jun 18, 2002·59 cites·17 claims
- 2191US6403485B1Method to form a low parasitic capacitance pseudo-SOI CMOS deviceCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jun 11, 2002·66 cites·27 claims
- 2290US9620642B2FinFET with isolationGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Apr 11, 2017·11 cites·19 claims
- 2390US6468851B1Method of fabricating CMOS device with dual gate electrodeCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Oct 22, 2002·55 cites·39 claims
- 2489US8946806B2Memory cell with decoupled channelsTAN SHYUE SENG·Filed 2011·Granted Feb 3, 2015·12 cites·21 claims
- 2589US8698118B2Compact RRAM device and methods of making sameTOH ENG HUAT·Filed 2012·Granted Apr 15, 2014·9 cites·23 claims
- 2689US8324031B2Diffusion barrier and method of formation thereofTAN SHYUE SENG·Filed 2008·Granted Dec 4, 2012·10 cites·7 claims
- 2789US6417056B1Method to form low-overlap-capacitance transistors by forming microtrench at the gate edgeCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jul 9, 2002·51 cites·27 claims
- 2889US6306715B1Method to form smaller channel with CMOS device by isotropic etching of the gate materialsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 23, 2001·46 cites·14 claims
- 2988US9484530B2Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Nov 1, 2016·6 cites·12 claims
- 3088US6511884B1Method to form and/or isolate vertical transistorsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jan 28, 2003·48 cites·27 claims
- 3188US6468877B1Method to form an air-gap under the edges of a gate electrode by using disposable spacer/linerCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 22, 2002·53 cites·21 claims
- 3287US8975708B2Semiconductor device with reduced contact resistance and method of manufacturing thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Mar 10, 2015·6 cites·18 claims
- 3387US6436770B1Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 20, 2002·45 cites·19 claims
- 3486US10020372B1Method to form thicker erase gate poly superflash NVMGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 10, 2018·5 cites·14 claims
- 3586US9029231B2Fin selector with gated RRAMTOH ENG HUAT·Filed 2013·Granted May 12, 2015·4 cites·8 claims
- 3685US10163979B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 3785US9219147B2LDMOS with improved breakdown voltageGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 22, 2015·6 cites·21 claims
- 3885US7759207B2Integrated circuit system employing stress memorization transferCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Jul 20, 2010·8 cites·10 claims
- 3985US7727856B2Selective STI stress relaxation through ion implantationCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jun 1, 2010·10 cites·55 claims
- 4084US9647035B2Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted May 9, 2017·4 cites·18 claims
- 4184US9263132B2Double gated flash memoryTAN SHYUE SENG·Filed 2011·Granted Feb 16, 2016·6 cites·9 claims
- 4283US9653137B2STT-MRAM bitcell for embedded flash applicationsGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 16, 2017·6 cites·20 claims
- 4383US9406801B2FinFETGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Aug 2, 2016·5 cites·20 claims
- 4483US9312268B2Integrated circuits with FinFET nonvolatile memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Apr 12, 2016·6 cites·19 claims
- 4583US6709934B2Method for forming variable-K gate dielectricCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Mar 23, 2004·26 cites·10 claims
- 4681US9034711B2LDMOS with two gate stacks having different work functions for improved breakdown voltageTOH ENG HUAT·Filed 2011·Granted May 19, 2015·5 cites·12 claims
- 4781US8674457B2Methods to reduce gate contact resistance for AC reff reductionTOH ENG HUAT·Filed 2010·Granted Mar 18, 2014·6 cites·18 claims
- 4881US8674332B2RRAM device with an embedded selector structure and methods of making sameTOH ENG HUAT·Filed 2012·Granted Mar 18, 2014·5 cites·38 claims
- 4981US7964894B2Integrated circuit system employing stress memorization transferGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Jun 21, 2011·4 cites·10 claims
- 5080US8993407B2Compact localized RRAM cell structure realized by spacer technologyTAN SHYUE SENG·Filed 2012·Granted Mar 31, 2015·3 cites·13 claims
Showing the top 50 of 178 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →