Inventor · disambiguated record
Elizabeth Strehlow
Also filed as: STREHLOW ELIZABETH · STREHLOW ELIZABETH A
11 granted patents·3 citations·filing 2019–2023
80Inventor score
Files withGLOBALFOUNDRIES US INC11
Top patents by PatentIndex Score
11 records- 0176US11276651B2IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structureGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 15, 2022·1 cites·17 claims
- 0276US11177182B2Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 16, 2021·1 cites·18 claims
- 0370US11205648B2IC structure with single active region having different doping profile than set of active regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 21, 2021·1 cites·17 claims
- 0465US12356675B2Planar transistor device comprising at least one layer of a two-dimensional (2D) materialGLOBALFOUNDRIES US INC·Filed 2023·Granted Jul 8, 2025·0 cites·19 claims
- 0562US11913971B2Motion-sensitive field effect transistor, motion detection system, and methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 0661US12424493B2Self-aligned double patterning with mandrel manipulationGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 0756US12046651B2Logic cell layout design for high density transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 0856US11567266B1Angled grating couplers with inclined side edge portionsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 0954US11581430B2Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Feb 14, 2023·0 cites·21 claims
- 1049US11722298B2Public-private encryption key generation using Pcell parameter values and on-chip physically unclonable function valuesGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 1148US11094791B1Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →