Inventor · disambiguated record
Emmerich Bertagnolli
Also filed as: BERTAGNOLLI EMMERICH
40 granted patents·4 pending applications·1,392 citations·filing 1989–2015
98Inventor score
Files withSIEMENS AG25INFINEON TECHNOLOGIES AG6ZEISS CARL MICROSCOPY GMBH3INNOVATIONSAGENTUR GES2WANZENBOECK HEINZ2
Top patents by PatentIndex Score
44 records- 0199US5767001AProcess for producing semiconductor components between which contact is made verticallySIEMENS AG·Filed 1994·Granted Jun 16, 1998·508 cites·4 claims
- 0292US6379978B2Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a magnetic field, and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 30, 2002·98 cites·5 claims
- 0392US6075265ADRAM cell arrangement and method for its fabricationSIEMENS AG·Filed 1998·Granted Jun 13, 2000·82 cites·8 claims
- 0490US6172391B1DRAM cell arrangement and method for the manufacture thereofSIEMENS AG·Filed 1998·Granted Jan 9, 2001·122 cites·11 claims
- 0587US6118159AElectrically programmable memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·66 cites·3 claims
- 0686US6894272B2Device for simultaneously carrying out an electrochemical and a topographical near-field microscopyINNOVATIONSAGENTUR GMBH·Filed 2001·Granted May 17, 2005·48 cites·19 claims
- 0783US6309930B1SRAM cell arrangement and method for manufacturing sameSIEMENS AG·Filed 2000·Granted Oct 30, 2001·24 cites·5 claims
- 0882US6352894B1Method of forming DRAM cell arrangementSIEMENS AG·Filed 2000·Granted Mar 5, 2002·25 cites·3 claims
- 0982US5741733AMethod for the production of a three-dimensional circuit arrangementSIEMENS AG·Filed 1995·Granted Apr 21, 1998·69 cites·26 claims
- 1081US7074340B2Method for producing a device for simultaneously carrying out an electrochemical and a topographical near-field microscopyINNOVATIONSAGENTUR GES·Filed 2001·Granted Jul 11, 2006·41 cites·26 claims
- 1179US8507854B2Particle beam microscopy system and method for operating the sameBUEHLER WOLFRAM·Filed 2010·Granted Aug 13, 2013·7 cites·24 claims
- 1278US8143594B2Method of depositing protective structuresWANZENBOECK HEINZ·Filed 2010·Granted Mar 27, 2012·6 cites·19 claims
- 1377US5930596ASemiconductor component for vertical integration and manufacturing methodSIEMENS AG·Filed 1995·Granted Jul 27, 1999·54 cites·3 claims
- 1470US8939108B2Processing systemZEISS CARL MICROSCOPY GMBH·Filed 2012·Granted Jan 27, 2015·2 cites·37 claims
- 1570US5801428AMOS transistor for biotechnical applicationsSIEMENS AG·Filed 1997·Granted Sep 1, 1998·33 cites·18 claims
- 1668US6097049ADRAM cell arrangementSIEMENS AG·Filed 1999·Granted Aug 1, 2000·38 cites·9 claims
- 1760US7923702B2System and method for processing an objectZEISS CARL NTS GMBH·Filed 2008·Granted Apr 12, 2011·1 cites·19 claims
- 1860US6087692ADRAM cell configuration and method for its fabricationSIEMENS AG·Filed 1998·Granted Jul 11, 2000·17 cites·20 claims
- 1959US7084442B2Double gate transistor arrangement for receiving electrical signals from living cellsAUSTRIA WIRTSCHAFTSSERVICE GMBH·Filed 2004·Granted Aug 1, 2006·2 cites·12 claims
- 2056US9006681B2Method of depositing protective structuresZEISS CARL MICROSCOPY GMBH·Filed 2014·Granted Apr 14, 2015·0 cites·25 claims
- 2156US6586795B2DRAM cell configuration whose memory cells can have transistors and capacitors with improved electrical propertiesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 1, 2003·6 cites·33 claims
- 2256US6376313B1Integrated circuit having at least two vertical MOS transistors and method for manufacturing sameSIEMENS AG·Filed 1998·Granted Apr 23, 2002·14 cites·4 claims
- 2354US2010024730A1Processing systemBERTAGNOLLI EMMERICH·Filed 2009·Application pending·0 cites
- 2453US5698112ACorrosion protection for micromechanical metal layersSIEMENS AG·Filed 1995·Granted Dec 16, 1997·21 cites·7 claims
- 2551US5217909AMethod for manufacturing a bipolar transistorSIEMENS AG·Filed 1991·Granted Jun 8, 1993·14 cites·13 claims
- 2648US6583464B1Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistorINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jun 24, 2003·10 cites·5 claims
- 2747US6044009ADRAM cell arrangement and method for its productionSIEMENS AG·Filed 1999·Granted Mar 28, 2000·8 cites·5 claims
- 2847US2015114294A1Processing SystemZEISS CARL MICROSCOPY GMBH·Filed 2015·Application pending·0 cites
- 2946US8008639B2System for processing an objectZEISS CARL NTS GMBH·Filed 2008·Granted Aug 30, 2011·0 cites·28 claims
- 3046US5472916AMethod for manufacturing tunnel-effect sensorsSIEMENS AG·Filed 1994·Granted Dec 5, 1995·10 cites·6 claims
- 3146US5213670AMethod for manufacturing a polycrystalline layer on a substrateSIEMENS AG·Filed 1991·Granted May 25, 1993·22 cites·27 claims
- 3246US2012187291A1Method of Depositing Protective StructuresWANZENBOECK HEINZ·Filed 2012·Application pending·0 cites
- 3345US6566202B2Integrated circuit having at least two vertical MOS transistors and method for manufacturing sameSIEMENS AG·Filed 2002·Granted May 20, 2003·2 cites·6 claims
- 3442US5358882AMethod for manufacturing a bipolar transistor in a substrateSIEMENS AG·Filed 1993·Granted Oct 25, 1994·12 cites·8 claims
- 3538US6222753B1SRAM cell arrangement and method for manufacturing sameSIEMENS AG·Filed 1998·Granted Apr 24, 2001·4 cites·5 claims
- 3638US6211019B1Read-only memory cell device and method for its productionINFINEON TECHNOLOGIES AG·Filed 1998·Granted Apr 3, 2001·4 cites·11 claims
- 3738US2005101995A1Arrangement for receiving electrical signals from living cells and for the selective transmission of electrical stimulation to living cellsINNOVATIONSAGENTUR GES·Filed 2004·Application pending·0 cites
- 3836US5047823ACircuit structure having a lateral bipolar transistor and its method of manufactureSIEMENS AG·Filed 1990·Granted Sep 10, 1991·7 cites·26 claims
- 3935US6642565B2Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 4, 2003·0 cites·11 claims
- 4035US4889823ABipolar transistor structure for very high speed circuits and method for the manufacture thereofSIEMENS AG·Filed 1989·Granted Dec 26, 1989·9 cites·12 claims
- 4134US5460982AMethod for manufacturing lateral bipolar transistorsSIEMENS AG·Filed 1994·Granted Oct 24, 1995·3 cites·7 claims
- 4232US6403440B1Method for fabricating a stacked capacitor in a semiconductor configuration, and stacked capacitor fabricated by this methodINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jun 11, 2002·1 cites·14 claims
- 4332US5395775AMethod for manufacturing lateral bipolar transistorsSIEMENS AG·Filed 1994·Granted Mar 7, 1995·2 cites·9 claims
- 4430US5407843AMethod for manufacturing lateral bipolar transistorsSIEMENS AG·Filed 1994·Granted Apr 18, 1995·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →