Inventor · disambiguated record
Ende Shan
Also filed as: SHAN ENDE
8 granted patents·134 citations·filing 1996–2001
87Inventor score
Top patents by PatentIndex Score
8 records- 0185US6140228ALow temperature metallization processCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Oct 31, 2000·69 cites·24 claims
- 0277US6756302B1Low temperature metallization processCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 29, 2004·19 cites·23 claims
- 0354US6187667B1Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Feb 13, 2001·16 cites·19 claims
- 0449US6534398B2Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Mar 18, 2003·2 cites·36 claims
- 0547US6746950B2Low temperature aluminum planarization processVITESSE SEMICONDUCTOR CORP·Filed 2001·Granted Jun 8, 2004·3 cites·34 claims
- 0644US5968851AControlled isotropic etch process and method of forming an opening in a dielectric layerCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Oct 19, 1999·11 cites·18 claims
- 0737US6906421B1Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the sameCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Jun 14, 2005·9 cites·12 claims
- 0835US6156645AMethod of forming a metal layer on a substrate, including formation of wetting layer at a high temperatureCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Dec 5, 2000·5 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →