Inventor · disambiguated record
Eng Huat Toh
Also filed as: TOH ENG HUAT
227 granted patents·34 pending applications·596 citations·filing 2009–2024
99Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD223TOH ENG HUAT22TAN SHYUE SENG6TAN CHUNG FOONG4TAN SHYUE SENG JASON3
Top patents by PatentIndex Score
261 records- 0197US11793004B2Resistive random access memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Oct 17, 2023·3 cites·15 claims
- 0297US9734882B2Magnetic memory cells with high write current and read stabilityGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Aug 15, 2017·25 cites·20 claims
- 0397US9659943B1Programmable integrated circuits and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 23, 2017·21 cites·20 claims
- 0497US9542987B2Magnetic memory cells with low switching current densityGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 10, 2017·28 cites·20 claims
- 0597US8492235B2FinFET with stressorsTOH ENG HUAT·Filed 2010·Granted Jul 23, 2013·29 cites·19 claims
- 0697US8440533B2Self-aligned contact for replacement metal gate and silicide last processesTOH ENG HUAT·Filed 2011·Granted May 14, 2013·33 cites·9 claims
- 0796US10050082B1Hall element for 3-D sensing using integrated planar and vertical elements and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Aug 14, 2018·19 cites·20 claims
- 0896US9673388B2Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 6, 2017·16 cites·20 claims
- 0995US8502279B2Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substratesTOH ENG HUAT·Filed 2011·Granted Aug 6, 2013·24 cites·21 claims
- 1093US10424616B1Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Sep 24, 2019·6 cites·17 claims
- 1193US9431497B2Transistor devices having an anti-fuse configuration and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Aug 30, 2016·15 cites·20 claims
- 1293US8368127B2Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive currentGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Feb 5, 2013·23 cites·16 claims
- 1392US10847720B1Non-volatile memory elements with filament confinementGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Nov 24, 2020·7 cites·19 claims
- 1492US8889494B2FinfetTOH ENG HUAT·Filed 2010·Granted Nov 18, 2014·14 cites·17 claims
- 1592US8748271B2LDMOS with improved breakdown voltageTOH ENG HUAT·Filed 2011·Granted Jun 10, 2014·13 cites·12 claims
- 1691US9871076B2Domain wall magnetic memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 16, 2018·7 cites·24 claims
- 1791US9583168B1Drive current enhancement for integrated circuit memory structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 28, 2017·14 cites·13 claims
- 1891US8647937B2Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levelsTOH ENG HUAT·Filed 2012·Granted Feb 11, 2014·10 cites·12 claims
- 1990US11791083B2Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 17, 2023·1 cites·20 claims
- 2090US11404549B2Split gate flash memory cells with a trench-formed select gateGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Aug 2, 2022·2 cites·19 claims
- 2190US11335852B2Resistive random access memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted May 17, 2022·2 cites·20 claims
- 2290US9768231B2High density multi-time programmable resistive memory devices and method of forming thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Sep 19, 2017·6 cites·19 claims
- 2390US9620642B2FinFET with isolationGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Apr 11, 2017·11 cites·19 claims
- 2489US11217747B2Memory devices and methods of forming memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jan 4, 2022·2 cites·17 claims
- 2589US8946806B2Memory cell with decoupled channelsTAN SHYUE SENG·Filed 2011·Granted Feb 3, 2015·12 cites·21 claims
- 2689US8698118B2Compact RRAM device and methods of making sameTOH ENG HUAT·Filed 2012·Granted Apr 15, 2014·9 cites·23 claims
- 2789US8349692B2Channel surface technique for fabrication of FinFET devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2011·Granted Jan 8, 2013·9 cites·18 claims
- 2888US11289649B2Non-volatile memory elements with a narrowed electrodeGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 2988US10693445B1Magnetic tunnel junction ring oscillator with tunable frequency and methods for operating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jun 23, 2020·3 cites·14 claims
- 3088US10217828B1Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Feb 26, 2019·7 cites·18 claims
- 3188US10134459B2MRAM with metal-insulator-transition materialGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 20, 2018·5 cites·20 claims
- 3288US9484530B2Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Nov 1, 2016·6 cites·12 claims
- 3388US9178138B2Method for forming a PCRAM with low reset currentGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 3487US9882125B2Selector device for a non-volatile memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 30, 2018·5 cites·20 claims
- 3587US8975708B2Semiconductor device with reduced contact resistance and method of manufacturing thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Mar 10, 2015·6 cites·18 claims
- 3686US11967664B2Photodiodes with serpentine shaped electrical junctionGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Apr 23, 2024·1 cites·20 claims
- 3786US10495603B1High performance ISFET with ferroelectric materialGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 3, 2019·2 cites·18 claims
- 3886US9029231B2Fin selector with gated RRAMTOH ENG HUAT·Filed 2013·Granted May 12, 2015·4 cites·8 claims
- 3985US11856875B2Memory devices and methods for fabricating memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
- 4085US11719773B2Magnetic field sensor with MTJ elements arranged in seriesGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 8, 2023·1 cites·18 claims
- 4185US10163979B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 4285US9219147B2LDMOS with improved breakdown voltageGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 22, 2015·6 cites·21 claims
- 4385US8759875B1Vertical nanowire based hetero-structure split gate memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Granted Jun 24, 2014·8 cites·20 claims
- 4484US11374135B2Sensor and method of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jun 28, 2022·1 cites·12 claims
- 4584US11050426B1Logic gate devices and methods of forming a logic gate deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jun 29, 2021·2 cites·17 claims
- 4684US10724983B2Sensor device and a method for forming the sensor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 4784US9647035B2Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted May 9, 2017·4 cites·18 claims
- 4884US9263132B2Double gated flash memoryTAN SHYUE SENG·Filed 2011·Granted Feb 16, 2016·6 cites·9 claims
- 4983US9653137B2STT-MRAM bitcell for embedded flash applicationsGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 16, 2017·6 cites·20 claims
- 5083US9406801B2FinFETGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Aug 2, 2016·5 cites·20 claims
Showing the top 50 of 261 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →