Inventor · disambiguated record
Eric Braun
Also filed as: BRAUN ERIC · BRAUN ERIC K
17 granted patents·6 pending applications·53 citations·filing 2002–2023
91Inventor score
Files withMONOLITHIC POWER SYSTEMS INC17CHENGDU MONOLITHIC POWER SYS4ANALOG DEVICES INC1Monolithic power systems co ltd1
Top patents by PatentIndex Score
23 records- 0192US8922963B2Electrostatic discharge protection circuit and method thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Dec 30, 2014·12 cites·3 claims
- 0291US11508806B1Low leakage ESD MOSFETMONOLITHIC POWER SYSTEMS INC·Filed 2021·Granted Nov 22, 2022·2 cites·14 claims
- 0391US9502251B1Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing processMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Nov 22, 2016·8 cites·20 claims
- 0487US9941171B1Method for fabricating LDMOS with reduced source regionMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Apr 10, 2018·5 cites·6 claims
- 0586US9893146B1Lateral DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Feb 13, 2018·5 cites·12 claims
- 0678US11282959B2FET device insensitive to noise from drive pathMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Mar 22, 2022·1 cites·16 claims
- 0777US9893518B2ESD protection circuit with false triggering preventionMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Feb 13, 2018·2 cites·16 claims
- 0874US9450052B1EEPROM memory cell with a coupler region and method of making the sameMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Sep 20, 2016·2 cites·20 claims
- 0972US9245647B2One-time programmable memory cell and circuitCHENGDU MONOLITHIC POWER SYS·Filed 2014·Granted Jan 26, 2016·3 cites·19 claims
- 1070US10665712B2LDMOS device with a field plate contact metal layer with a sub-maximum sizeMonolithic power systems co ltd·Filed 2018·Granted May 26, 2020·2 cites·17 claims
- 1169US9595952B2Switching circuit and the method thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Mar 14, 2017·3 cites·7 claims
- 1263US10263420B2Bi-directional snapback ESD protection circuitMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Apr 16, 2019·1 cites·12 claims
- 1363US10083930B2Semiconductor device reducing parasitic loop inductance of systemMONOLITHIC POWER SYSTEMS INC·Filed 2017·Granted Sep 25, 2018·1 cites·13 claims
- 1462US10069422B2Synchronous switching converter and associated integrated semiconductor deviceCHENGDU MONOLITHIC POWER SYS·Filed 2017·Granted Sep 4, 2018·1 cites·16 claims
- 1557US2025169176A1Semiconductor device with group iii-v compound materialMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 1653US9892787B2Multi-time programmable non-volatile memory cell and associated circuitsCHENGDU MONOLITHIC POWER SYS·Filed 2017·Granted Feb 13, 2018·1 cites·19 claims
- 1750US2015001620A1Ldmos device with improved avalanche energy and associated fabricating methodMONOLITHIC POWER SYSTEMS INC·Filed 2013·Application pending·0 cites
- 1847US10930644B2Bi-directional snapback ESD protection circuitMONOLITHIC POWER SYSTEMS INC·Filed 2018·Granted Feb 23, 2021·0 cites·16 claims
- 1946US6646490B1Bipolar breakdown enhancement circuit for tri-state output stageANALOG DEVICES INC·Filed 2002·Granted Nov 11, 2003·4 cites·17 claims
- 2045US2015162441A1Ldmos device with improved avalanche energy and associated fabricating methodMONOLITHIC POWER SYSTEMS INC·Filed 2015·Application pending·0 cites
- 2145US2021359124A1Schottky contact region for hole injection suppressionMONOLITHIC POWER SYSTEMS INC·Filed 2020·Application pending·0 cites
- 2243US2020144381A1Ldmos device with a drain contact structure with reduced sizeMONOLITHIC POWER SYSTEMS INC·Filed 2018·Application pending·0 cites
- 2339US2018286857A1Semiconductor device with snubber and associated fabrication methodCHENGDU MONOLITHIC POWER SYS·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →