Inventor · disambiguated record
Eric Raymond Evarts
Also filed as: EVARTS ERIC RAYMOND
12 granted patents·3 pending applications·8 citations·filing 2018–2023
82Inventor score
Files withIBM15
Top patents by PatentIndex Score
15 records- 0196US11793001B2Spin-orbit-torque magnetoresistive random-access memoryIBM·Filed 2021·Granted Oct 17, 2023·3 cites·20 claims
- 0284US11226252B2Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensorsIBM·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
- 0383US10727273B2Magnetoresistive random access memory thin film transistor unit cellIBM·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 0477US11437083B2Two-bit magnetoresistive random-access memory device architectureIBM·Filed 2021·Granted Sep 6, 2022·1 cites·25 claims
- 0560US12153821B2Analog persistent circuit for storage access monitoringIBM·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 0660US11514962B2Two-bit magnetoresistive random-access memory cellIBM·Filed 2020·Granted Nov 29, 2022·0 cites·22 claims
- 0759US11665974B2MRAM containing magnetic top contactIBM·Filed 2021·Granted May 30, 2023·0 cites·25 claims
- 0858US10942072B2Nanoscale magnetic tunnel junction arrays for sub-micrometer resolution pressure sensorIBM·Filed 2018·Granted Mar 9, 2021·0 cites·20 claims
- 0955US11114146B2Nanosecond non-destructively erasable magnetoresistive random-access memoryIBM·Filed 2019·Granted Sep 7, 2021·0 cites·18 claims
- 1055US2025194104A1Double-sided memory device using a shared transistorIBM·Filed 2023·Application pending·0 cites
- 1153US11942126B2Selectively biasing magnetoresistive random-access memory cellsIBM·Filed 2021·Granted Mar 26, 2024·0 cites·14 claims
- 1250US12283298B2Magnetoresistive random access memory with data scrubbingIBM·Filed 2022·Granted Apr 22, 2025·0 cites·20 claims
- 1350US11335850B2Magnetoresistive random-access memory device including magnetic tunnel junctionsIBM·Filed 2020·Granted May 17, 2022·0 cites·20 claims
- 1443US2024304261A1Self-corrected threshold voltages in non-volatile memoryIBM·Filed 2023·Application pending·0 cites
- 1542US2022180911A1External magnetic bottom contact structure for mramIBM·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →