Inventor · disambiguated record
Erich Gmeilbauer
Also filed as: GMEILBAUER ERICH
5 granted patents·2 pending applications·25 citations·filing 2001–2011
75Inventor score
Top patents by PatentIndex Score
7 records- 0178US7341787B2Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafersSILTRONIC AG·Filed 2005·Granted Mar 11, 2008·8 cites·8 claims
- 0261US6660082B2Method and apparatus for doping a melt with a dopantWACKER SILTRONIC HALBLEITERMAT·Filed 2001·Granted Dec 9, 2003·11 cites·5 claims
- 0356US6461582B2Single-crystal rod and process for its productionWACKER SILTRONIC HALBLEITERMAT·Filed 2001·Granted Oct 8, 2002·3 cites·5 claims
- 0454US7070649B2Process for producing a silicon single crystal which is doped with highly volatile foreign substancesSILTRONIC AG·Filed 2003·Granted Jul 4, 2006·3 cites·2 claims
- 0550US9988739B2Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced therebyGMEILBAUER ERICH·Filed 2011·Granted Jun 5, 2018·0 cites·1 claims
- 0640US2006174817A1Process for producing a silicon single crystal with controlled carbon contentSILTRONIC AG·Filed 2006·Application pending·0 cites
- 0737US2003154906A1Process for producing a highly doped silicon single crystalWACKER SILTRONIC HALBLEITERMAT·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →