Inventor · disambiguated record
Eric G. Stevens
Also filed as: STEVENS ERIC · STEVENS ERIC G · STEVENS ERIC GORDON
70 granted patents·9 pending applications·2,685 citations·filing 1985–2017
99Inventor score
Files withEASTMAN KODAK CO54SEMICONDUCTOR COMPONENTS IND LLC6DOAN HUNG Q5OMNIVISION TECH INC4STEVENS ERIC G4
Top patents by PatentIndex Score
79 records- 0199US5625210AActive pixel sensor integrated with a pinned photodiodeEASTMAN KODAK CO·Filed 1995·Granted Apr 29, 1997·521 cites·15 claims
- 0297US6100551AActive pixel sensor integrated with a pinned photodiodeEASTMAN KODAK CO·Filed 1998·Granted Aug 8, 2000·142 cites·23 claims
- 0397US5904493AActive pixel sensor integrated with a pinned photodiodeEASTMAN KODAK CO·Filed 1996·Granted May 18, 1999·148 cites·14 claims
- 0496US7728277B2PMOS pixel structure with low cross talk for active pixel image sensorsEASTMAN KODAK CO·Filed 2006·Granted Jun 1, 2010·29 cites·19 claims
- 0596US6027955AMethod of making an active pixel sensor integrated with a pinned photodiodeEASTMAN KODAK CO·Filed 1996·Granted Feb 22, 2000·130 cites·5 claims
- 0696US5841159AActive pixel sensor integrated with a photocapacitorEASTMAN KODAK CO·Filed 1996·Granted Nov 24, 1998·138 cites·13 claims
- 0795US5440343AMotion/still electronic image sensing apparatusEASTMAN KODAK CO·Filed 1994·Granted Aug 8, 1995·189 cites·12 claims
- 0895US5292682AMethod of making two-phase charge coupled deviceEASTMAN KODAK CO·Filed 1993·Granted Mar 8, 1994·138 cites·16 claims
- 0995US5235198ANon-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixelEASTMAN KODAK CO·Filed 1992·Granted Aug 10, 1993·149 cites·10 claims
- 1095US5111263ACharge-coupled device (CCD) image sensor operable in either interlace or non-interlace modeEASTMAN KODAK CO·Filed 1991·Granted May 5, 1992·195 cites·18 claims
- 1194US8378398B2Photodetector isolation in image sensorsOMNIVISION TECH INC·Filed 2010·Granted Feb 19, 2013·12 cites·6 claims
- 1292US8076746B2Back-illuminated image sensors having both frontside and backside photodetectorsMCCARTEN JOHN P·Filed 2009·Granted Dec 13, 2011·21 cites·19 claims
- 1392US6730899B1Reduced dark current for CMOS image sensorsEASTMAN KODAK CO·Filed 2003·Granted May 4, 2004·64 cites·9 claims
- 1491US8101450B1Photodetector isolation in image sensorsDOAN HUNG Q·Filed 2010·Granted Jan 24, 2012·11 cites·3 claims
- 1587US4984047ASolid-state image sensorEASTMAN KODAK CO·Filed 1988·Granted Jan 8, 1991·57 cites·6 claims
- 1686US8018016B2Back-illuminated image sensors having both frontside and backside photodetectorsOMNIVISION TECH INC·Filed 2009·Granted Sep 13, 2011·9 cites·6 claims
- 1786US5192990AOutput circuit for image sensorEASTMAN KODAK CO·Filed 1991·Granted Mar 9, 1993·68 cites·30 claims
- 1884US9905608B1EMCCD image sensor with stable charge multiplication gainSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Feb 27, 2018·4 cites·13 claims
- 1984US7492404B2Fast flush structure for solid-state image sensorsEASTMAN KODAK CO·Filed 2005·Granted Feb 17, 2009·8 cites·4 claims
- 2084US7091532B2Light shield process for solid-state image sensorsEASTMAN KODAK CO·Filed 2005·Granted Aug 15, 2006·6 cites·1 claims
- 2179US6794219B1Method for creating a lateral overflow drain, anti-blooming structure in a charge coupled deviceEASTMAN KODAK CO·Filed 2003·Granted Sep 21, 2004·23 cites·10 claims
- 2278US8329499B2Method of forming lateral overflow drain and channel stop regions in image sensorsBANGHART EDMUND K·Filed 2009·Granted Dec 11, 2012·4 cites·20 claims
- 2378US7875916B2Photodetector and n-layer structure for improved collection efficiencyEASTMAN KODAK CO·Filed 2006·Granted Jan 25, 2011·4 cites·12 claims
- 2477US8618458B2Back-illuminated CMOS image sensorsMCCARTEN JOHN P·Filed 2008·Granted Dec 31, 2013·4 cites·6 claims
- 2577US6693671B1Fast-dump structure for full-frame image sensors with lod antiblooming structuresEASTMAN KODAK CO·Filed 2000·Granted Feb 17, 2004·24 cites·21 claims
- 2677US6297070B1Active pixel sensor integrated with a pinned photodiodeEASTMAN KODAK CO·Filed 1999·Granted Oct 2, 2001·48 cites·2 claims
- 2775US5192920AHigh-sensitivity, low-noise transistor amplifierEASTMAN KODAK CO·Filed 1992·Granted Mar 9, 1993·26 cites·17 claims
- 2875US4949183AImage sensor having multiple horizontal shift registersEASTMAN KODAK CO·Filed 1989·Granted Aug 14, 1990·27 cites·15 claims
- 2973US5276520AEnhancing exposure latitude of image sensorsEASTMAN KODAK CO·Filed 1991·Granted Jan 4, 1994·34 cites·3 claims
- 3071US6803960B2Optical test structure for measuring charge-transfer efficiencyEASTMAN KODAK CO·Filed 2000·Granted Oct 12, 2004·16 cites·20 claims
- 3171US5070380ATransfer gate for photodiode to CCD image sensorEASTMAN KODAK CO·Filed 1990·Granted Dec 3, 1991·36 cites·14 claims
- 3269US7776638B2Two epitaxial layers to reduce crosstalk in an image sensorEASTMAN KODAK CO·Filed 2008·Granted Aug 17, 2010·1 cites·15 claims
- 3369US5130774AAntiblooming structure for solid-state image sensorEASTMAN KODAK CO·Filed 1990·Granted Jul 14, 1992·34 cites·18 claims
- 3468US4974043ASolid-state image sensorEASTMAN KODAK CO·Filed 1989·Granted Nov 27, 1990·22 cites·19 claims
- 3567US6867062B2Method for forming light shield process for solid-state image sensor with multi-metallization layerEASTMAN KODAK CO·Filed 2003·Granted Mar 15, 2005·10 cites·3 claims
- 3666US6583061B2Method for creating an anti-blooming structure in a charge coupled deviceEASTMAN KODAK CO·Filed 2001·Granted Jun 24, 2003·12 cites·4 claims
- 3765US8994139B2Lateral overflow drain and channel stop regions in image sensorsBANGHART EDMUND K·Filed 2012·Granted Mar 31, 2015·0 cites·10 claims
- 3865US6306676B1Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensorsEASTMAN KODAK CO·Filed 1996·Granted Oct 23, 2001·32 cites·20 claims
- 3963US8048711B2Method for forming deep isolation in imagersOMNIVISION TECH INC·Filed 2010·Granted Nov 1, 2011·1 cites·10 claims
- 4063US6351001B1CCD image sensorEASTMAN KODAK CO·Filed 1996·Granted Feb 26, 2002·31 cites·10 claims
- 4163US5349215AAntiblooming structure for solid-state image sensorEASTMAN KODAK CO·Filed 1993·Granted Sep 20, 1994·27 cites·4 claims
- 4262US8772891B2Lateral overflow drain and channel stop regions in image sensorsBANGHART EDMUND K·Filed 2009·Granted Jul 8, 2014·0 cites·10 claims
- 4362US6624453B2Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltageEASTMAN KODAK CO·Filed 2001·Granted Sep 23, 2003·9 cites·12 claims
- 4462US5703642AFull depletion mode clocking of solid-state image sensors for improved MTF performanceEASTMAN KODAK CO·Filed 1994·Granted Dec 30, 1997·20 cites·19 claims
- 4562US5306931ACCD image sensor with improved antiblooming characteristicsEASTMAN KODAK CO·Filed 1993·Granted Apr 26, 1994·24 cites·14 claims
- 4660US5235196ATransfer region design for charge-coupled device image sensorEASTMAN KODAK CO·Filed 1992·Granted Aug 10, 1993·22 cites·20 claims
- 4760US5040071AImage sensor having multiple horizontal shift registersEASTMAN KODAK CO·Filed 1990·Granted Aug 13, 1991·19 cites·16 claims
- 4859US9000500B2Image sensor with doped transfer gateDOAN HUNG Q·Filed 2010·Granted Apr 7, 2015·0 cites·10 claims
- 4959US7402787B2Method of thin lightshield process for solid-state image sensorsEASTMAN KODAK CO·Filed 2007·Granted Jul 22, 2008·0 cites·2 claims
- 5058US6051852ASelf aligned LOD antiblooming structure for solid-state imagersEASTMAN KODAK CO·Filed 1997·Granted Apr 18, 2000·19 cites·9 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →