Inventor · disambiguated record
Eun Yeoung Choi
Also filed as: CHOI EUN YEOUNG
10 granted patents·13 citations·filing 2015–2021
82Inventor score
Top patents by PatentIndex Score
10 records- 0179US11201166B2Three dimensional semiconductor device including first and second channels and buried insulation and conductive patterns and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 14, 2021·2 cites·20 claims
- 0276US10559584B2Semiconductor device including a dielectric layerCHOI EUN YEOUNG·Filed 2017·Granted Feb 11, 2020·3 cites·20 claims
- 0375US9698233B2Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the sameCHOI EUN-YEOUNG·Filed 2015·Granted Jul 4, 2017·3 cites·20 claims
- 0473US9613800B2Methods of manufacturing semiconductor devices including an oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 4, 2017·2 cites·8 claims
- 0570US9490140B2Method for manufacturing semiconductor deviceGO HYUN YONG·Filed 2015·Granted Nov 8, 2016·2 cites·20 claims
- 0667US10355099B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 16, 2019·1 cites·17 claims
- 0765US11723203B2Method of manufacturing three dimensional semiconductor device including first and second channels and buried insulation and conductive patternsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 0864US11864383B2Vertical-type memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 0955US11164884B2Vertical-type memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·20 claims
- 1042US11094709B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →