Inventor · disambiguated record
Eui-Chul Hwang
Also filed as: HWANG EUI CHUL
15 granted patents·2 pending applications·16 citations·filing 2012–2024
88Inventor score
Top patents by PatentIndex Score
17 records- 0192US9070706B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2012·Granted Jun 30, 2015·10 cites·20 claims
- 0286US10910376B2Semiconductor devices including diffusion break regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·18 claims
- 0386US2025126882A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0482US10804265B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 0581US12183734B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0663US11538807B2Method for fabricating a semiconductor device including a gate structure with an inclined side wallSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·10 claims
- 0759US9666706B2Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 30, 2017·0 cites·7 claims
- 0857US11011519B2Semiconductor device including gate structure having device isolation filmSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 18, 2021·0 cites·20 claims
- 0957US9419094B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2016·Granted Aug 16, 2016·0 cites·12 claims
- 1056US9343564B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2015·Granted May 17, 2016·0 cites·7 claims
- 1156US9306008B2Semiconductor device and method of fabricating the sameLEE DONG-SOO·Filed 2014·Granted Apr 5, 2016·0 cites·18 claims
- 1255US9324852B2Semiconductor device including a gate electrode on a protruding group III-V material layerCHO YOUNG-JIN·Filed 2015·Granted Apr 26, 2016·0 cites·4 claims
- 1353US9929239B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 27, 2018·0 cites·17 claims
- 1453US9099304B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 4, 2015·0 cites·18 claims
- 1547US11063150B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·19 claims
- 1644US10636793B2FINFETs having electrically insulating diffusion break regions therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·18 claims
- 1744US2015061030A1Semiconductor structure including metal silicide buffer layers and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →