Inventor · disambiguated record
Eugene A. Imhoff
Also filed as: IMHOFF EUGENE A · Imhoff Eugene
11 granted patents·1 pending application·50 citations·filing 1998–2020
86Inventor score
Files withUS GOV SEC NAVY5US NAVY2CHARLES STARK DRAPER LABORATORY INC1HOBART KARL D1MAHADIK NADEEMULLAH A1
Top patents by PatentIndex Score
12 records- 0191US10317210B2Whole angle MEMS gyroscope on hexagonal crystal substrateCHARLES STARK DRAPER LABORATORY INC·Filed 2016·Granted Jun 11, 2019·9 cites·32 claims
- 0288US7759186B2Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devicesUS NAVY·Filed 2009·Granted Jul 20, 2010·14 cites·26 claims
- 0385US10343900B2Material structure and method for deep silicon carbide etchingUS GOV SEC NAVY·Filed 2017·Granted Jul 9, 2019·3 cites·17 claims
- 0473US9129799B2Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphologyMAHADIK NADEEMULLAH A·Filed 2014·Granted Sep 8, 2015·4 cites·12 claims
- 0565US11649159B2Silicon carbide structure, device, and methodUS GOV SEC NAVY·Filed 2020·Granted May 16, 2023·0 cites·8 claims
- 0665US10020366B2Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphologyUS NAVY·Filed 2016·Granted Jul 10, 2018·1 cites·20 claims
- 0762US10717642B2Silicon carbide microelectromechanical structure, device, and methodUS GOV SEC NAVY·Filed 2019·Granted Jul 21, 2020·0 cites·7 claims
- 0862US8723218B2Silicon carbide rectifierHOBART KARL D·Filed 2012·Granted May 13, 2014·1 cites·30 claims
- 0958US10589983B2Silicon carbide microelectromechanical structure, device, and methodUS GOV SEC NAVY·Filed 2017·Granted Mar 17, 2020·0 cites·18 claims
- 1055US2018244513A1Silicon carbide structure, device, and methodUS GOV SEC NAVY·Filed 2018·Application pending·0 cites
- 1152US5981975AOn-chip alignment fiducials for surface emitting devicesWHITAKER CORP·Filed 1998·Granted Nov 9, 1999·18 cites·11 claims
- 1227US10403509B2Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealingTADJER MARKO J·Filed 2015·Granted Sep 3, 2019·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →