Inventor · disambiguated record
Eun-Young Minn
Also filed as: MINN EUN-YOUNG
7 granted patents·1 pending application·93 citations·filing 1998–2013
86Inventor score
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8 records- 0186US6566735B1Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption filmSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 20, 2003·38 cites·7 claims
- 0268US6509255B2Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 21, 2003·14 cites·6 claims
- 0368US6507086B1Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 14, 2003·14 cites·4 claims
- 0466US6696353B2Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption filmSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 24, 2004·11 cites·11 claims
- 0564USRE46549EIntegrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption filmCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted Sep 12, 2017·1 cites·9 claims
- 0657US6509263B1Method for fabricating a semiconductor memory device having polysilicon with an enhanced surface concentration and reduced contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 21, 2003·8 cites·13 claims
- 0739US6218697B1Contact in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 17, 2001·7 cites·6 claims
- 0828US2001009786A1Contact in semiconductor memory device and method of forming the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →