Inventor · disambiguated record
Eun Jong Shin
Also filed as: SHIN EUN J · SHIN EUN JONG
12 granted patents·9 pending applications·47 citations·filing 2005–2009
88Inventor score
Top patents by PatentIndex Score
21 records- 0183US7589372B2Nonvolatile memory device and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2008·Granted Sep 15, 2009·10 cites·18 claims
- 0281US7683441B2Semiconductor device and method for fabricating the sameDONGBU HITEK CO LTD·Filed 2008·Granted Mar 23, 2010·10 cites·19 claims
- 0380US7488634B2Method for fabricating flash memory deviceDONGBU ELECTRONICS CO LTD·Filed 2005·Granted Feb 10, 2009·8 cites·26 claims
- 0475US7994591B2Semiconductor device and method for manufacturing the sameDONGBU HITEK CO LTD·Filed 2008·Granted Aug 9, 2011·6 cites·19 claims
- 0570US7371639B2Nonvolatile memory device and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·4 cites·20 claims
- 0665US7358595B2Method for manufacturing MOS transistorDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Apr 15, 2008·2 cites·20 claims
- 0761US7704818B2Semiconductor device and method for manufacturing semiconductor deviceDONGBU HITEK CO LTD·Filed 2008·Granted Apr 27, 2010·2 cites·20 claims
- 0857US8084317B2Semiconductor device and method of manufacturing the sameSHIN EUN JONG·Filed 2009·Granted Dec 27, 2011·2 cites·12 claims
- 0957US8084350B2Method for manufacturing semiconductor deviceSHIN EUN-JONG·Filed 2008·Granted Dec 27, 2011·2 cites·18 claims
- 1056US7622331B2Method for forming contacts of semiconductor deviceDONGBU HITEK CO LTD·Filed 2007·Granted Nov 24, 2009·1 cites·19 claims
- 1149US8048730B2Semiconductor device and method for manufacturing the sameDONGBU HITEK CO LTD·Filed 2009·Granted Nov 1, 2011·0 cites·18 claims
- 1240US7371655B2Method of fabricating low-power CMOS deviceDONGBU ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·0 cites·10 claims
- 1340US2010123204A1Semiconductor Device and Method for Fabricating the SameSHIN EUN JONG·Filed 2009·Application pending·0 cites
- 1439US2009014810A1Method for fabricating shallow trench isolation and method for fabricating transistorSHIN EUN-JONG·Filed 2008·Application pending·0 cites
- 1539US2007145496A1Semiconductor device and method of manufacturing the sameSHIN EUN JONG·Filed 2006·Application pending·0 cites
- 1639US2010019327A1Semiconductor Device and Method of Fabricating the SameSHIN EUN JONG·Filed 2008·Application pending·0 cites
- 1738US2007145521A1Semiconductor device and method of manufacturing the sameSHIN EUN JONG·Filed 2006·Application pending·0 cites
- 1838US2008237744A1Semiconductor Device and Manufacturing Method ThereofSHIN EUN JONG·Filed 2008·Application pending·0 cites
- 1937US2007072410A1Method of forming copper interconnection using dual damascene processDONGBU ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2037US2007072420A1Method of forming copper interconnection using dual damascene process and semiconductor device having copper interconnection according to the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2133US2006030101A1Semiconductor device and method for fabricating the sameSHIN EUN J·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →