Inventor · disambiguated record
Eui-Joon Yoon
Also filed as: YOON EUI-JOON
13 granted patents·2 pending applications·313 citations·filing 1995–2021
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD5TONG YANG CEMENT CORP5DONG YANG CEMENT CORP1INOSTEK INC1KEE BONG1
Top patents by PatentIndex Score
15 records- 0191US7148541B2Vertical channel field effect transistors having insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 12, 2006·53 cites·34 claims
- 0289US6054331AApparatus and methods of depositing a platinum film with anti-oxidizing function over a substrateTONG YANG CEMENT CORP·Filed 1998·Granted Apr 25, 2000·97 cites·28 claims
- 0385US10205052B2Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2015·Granted Feb 12, 2019·4 cites·28 claims
- 0473US6025205AApparatus and methods of forming preferred orientation-controlled platinum films using nitrogenTONG YANG CEMENT CORP·Filed 1998·Granted Feb 15, 2000·45 cites·21 claims
- 0572US7459359B2Methods of fabricating vertical channel field effect transistors having insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·4 cites·12 claims
- 0670US11476388B2Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 18, 2022·0 cites·21 claims
- 0770US6498097B1Apparatus and method of forming preferred orientation-controlled platinum film using oxygenTONG YANG CEMENT CORP·Filed 1998·Granted Dec 24, 2002·41 cites·45 claims
- 0870US5736422AMethod for depositing a platinum layer on a silicon waferDONG YANG CEMENT CORP·Filed 1995·Granted Apr 7, 1998·40 cites·13 claims
- 0962US9978907B2Semiconductor ultraviolet light emitting device having improved light extraction efficiencySAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·1 cites·13 claims
- 1061US6723186B2Method of manufacturing metallic film consisting of giant single crystal grainsINOSTEK INC·Filed 2001·Granted Apr 20, 2004·10 cites·6 claims
- 1160US10916681B2Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·0 cites·20 claims
- 1245US6312567B1Method of forming a (200)-oriented platinum layerTONG YANG CEMENT CORP·Filed 1999·Granted Nov 6, 2001·13 cites·26 claims
- 1339US2007292987A1Method Of Fabricating Strained Thin Film Semiconductor LayerYOON EUI-JOON·Filed 2005·Application pending·0 cites
- 1438US2008186512A1Apparatus and Method for Measuring Curvature Using Multiple BeamsKEE BONG·Filed 2006·Application pending·0 cites
- 1536US5981390AMethod for depositing a platinum layer on a silicon waferTONG YANG CEMENT CORP·Filed 1997·Granted Nov 9, 1999·5 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →