Inventor · disambiguated record
Evan Jones
Also filed as: JONES EVAN · JONES EVAN B · JONES EVAN BERTRUE
9 granted patents·4 pending applications·109 citations·filing 2007–2023
85Inventor score
Top patents by PatentIndex Score
13 records- 0197US9257647B2Phase change material switch and method of making the sameBORODULIN PAVEL·Filed 2013·Granted Feb 9, 2016·74 cites·23 claims
- 0296US10971612B2High electron mobility transistors and power amplifiers including said transistors having improved performance and reliabilityCREE INC·Filed 2019·Granted Apr 6, 2021·21 cites·21 claims
- 0388US10923585B2High electron mobility transistors having improved contact spacing and/or improved contact viasCREE INC·Filed 2019·Granted Feb 16, 2021·6 cites·19 claims
- 0481US11075271B2Stepped field plates with proximity to conduction channel and related fabrication methodsCREE INC·Filed 2019·Granted Jul 27, 2021·3 cites·29 claims
- 0567US7494546B1Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devicesBLUE WAVE SEMICODNUCTORS INC·Filed 2007·Granted Feb 24, 2009·5 cites·7 claims
- 0665US11616136B2High electron mobility transistors and power amplifiers including said transistors having improved performance and reliabilityWOLFSPEED INC·Filed 2021·Granted Mar 28, 2023·0 cites·24 claims
- 0760US12113114B2Transistor with ohmic contactsWOLFSPEED INC·Filed 2021·Granted Oct 8, 2024·0 cites·26 claims
- 0854US2025098199A1Corrosion Resistant Metal Structures for Wide Bandgap Semiconductor DevicesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 0952US2024072125A1Electronic devices with reduced ohmic to ohmic dimensionsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 1051US2024313099A1Metal stack with phonon scattering layer that forms a non-ohmic contact to a semiconductor layerWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 1150US2024194751A1Transistor devices including self-aligned ohmic contacts and contact regions and related fabrication methodsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 1248US12218202B2Semiconductor device incorporating a substrate recessWOLFSPEED INC·Filed 2021·Granted Feb 4, 2025·0 cites·13 claims
- 1348US11257940B2Group III HEMT and capacitor that share structural featuresCREE INC·Filed 2020·Granted Feb 22, 2022·0 cites·29 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →