Inventor · disambiguated record
Evgeny Nikolaevich Mokhov
Also filed as: MOKHOV EVGENY N · MOKHOV EVGENY NIKOLAEVICH
11 granted patents·1 pending application·243 citations·filing 1975–2002
92Inventor score
Top patents by PatentIndex Score
12 records- 0189US6428621B1Method for growing low defect density silicon carbideFOX GROUP INC·Filed 2001·Granted Aug 6, 2002·41 cites·32 claims
- 0287US6508880B2Apparatus for growing low defect density silicon carbideFOX GROUP INC·Filed 2001·Granted Jan 21, 2003·24 cites·40 claims
- 0385US4147572AMethod for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition techniqueVODAKOV JURY A·Filed 1978·Granted Apr 3, 1979·59 cites·3 claims
- 0479US6534026B2Low defect density silicon carbideFOX GROUP INC·Filed 2001·Granted Mar 18, 2003·35 cites·14 claims
- 0574US6863728B2Apparatus for growing low defect density silicon carbideFOX GROUP INC·Filed 2002·Granted Mar 8, 2005·12 cites·16 claims
- 0674US6562130B2Low defect axially grown single crystal silicon carbideFOX GROUP INC·Filed 2001·Granted May 13, 2003·12 cites·26 claims
- 0771US6562131B2Method for growing single crystal silicon carbideFOX GROUP INC·Filed 2001·Granted May 13, 2003·10 cites·36 claims
- 0871US6261363B1Technique for growing silicon carbide monocrystalsFiled 1997·Granted Jul 17, 2001·28 cites·1 claims
- 0967US6537371B2Niobium crucible fabrication and treatmentFOX GROUP INC·Filed 2001·Granted Mar 25, 2003·7 cites·34 claims
- 1063US6547877B2Tantalum crucible fabrication and treatmentFOX GROUP INC·Filed 2001·Granted Apr 15, 2003·5 cites·34 claims
- 1143US3986193ASemiconductor SiCl light source and a method of manufacturing sameVODAKOV JURY ALEXANDROVICH·Filed 1975·Granted Oct 12, 1976·10 cites·10 claims
- 1237US2002170490A1Method and apparatus for growing aluminum nitride monocrystalsFOX GROUP INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →