Inventor · disambiguated record
F. Daniel Gealy
Also filed as: GEALY F D · GEALY F DANIEL
94 granted patents·13 pending applications·1,689 citations·filing 1997–2023
99Inventor score
Top patents by PatentIndex Score
107 records- 0199US10163977B1Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 25, 2018·34 cites·14 claims
- 0298US6890596B2Deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted May 10, 2005·418 cites·66 claims
- 0397US9543515B2Electrode materials and interface layers to minimize chalcogenide interface resistanceINTEL CORP·Filed 2013·Granted Jan 10, 2017·19 cites·7 claims
- 0497US6348709B1Electrical contact for high dielectric constant capacitors and method for fabricating the sameMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 19, 2002·160 cites·40 claims
- 0595US10256406B2Semiconductor structures including liners and related methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 9, 2019·12 cites·21 claims
- 0695US6297527B1Multilayer electrode for ferroelectric and high dielectric constant capacitorsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 2, 2001·97 cites·54 claims
- 0794US6682969B1Top electrode in a strongly oxidizing environmentMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 27, 2004·61 cites·35 claims
- 0893US9716226B2Electrode materials and interface layers to minimize chalcogenide interface resistanceINTEL CORP·Filed 2016·Granted Jul 25, 2017·9 cites·11 claims
- 0993US9130157B2Memory cells having a number of conductive diffusion barrier materials and manufacturing methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 8, 2015·13 cites·14 claims
- 1093US8049304B2Constructions comprising hafnium oxide and/or zirconium oxideROUND ROCK RES LLC·Filed 2009·Granted Nov 1, 2011·20 cites·7 claims
- 1193US5910880ASemiconductor circuit components and capacitorsMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 8, 1999·98 cites·5 claims
- 1292US9634245B2Structures incorporating and methods of forming metal lines including carbonMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 25, 2017·7 cites·19 claims
- 1392US6900497B2Integrated circuit with a capacitor comprising an electrodeMICRON TECHNOLOGY INC·Filed 2004·Granted May 31, 2005·43 cites·10 claims
- 1492US6746916B2Method for forming a multilayer electrode for a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 8, 2004·48 cites·51 claims
- 1591US6777739B2Multilayer electrode for a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 17, 2004·42 cites·53 claims
- 1691US6753271B2Atomic layer deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 22, 2004·40 cites·49 claims
- 1791US6744093B2Multilayer electrode for a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 1, 2004·42 cites·6 claims
- 1890US9711717B2Memory cells having a number of conductive diffusion barrier materials and manufacturing methodsMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 18, 2017·6 cites·11 claims
- 1990US6785120B1Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxideMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 31, 2004·33 cites·61 claims
- 2089US11769542B2Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulatorMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 26, 2023·1 cites·15 claims
- 2188US6146959AMethod of forming capacitors containing tantalumMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 14, 2000·64 cites·43 claims
- 2284US6191443B1Capacitors, methods of forming capacitors, and DRAM memory cellsMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 20, 2001·52 cites·7 claims
- 2383US10062426B2Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core peripheryMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 28, 2018·5 cites·6 claims
- 2483US7537804B2ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substratesMICRON TECHNOLOGY INC·Filed 2006·Granted May 26, 2009·7 cites·23 claims
- 2583US7498057B2Deposition methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 3, 2009·4 cites·34 claims
- 2683US6812110B1Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materialsMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 2, 2004·19 cites·3 claims
- 2783US6806187B2Electrical contact for high dielectric constant capacitors and method for fabricating the sameMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 19, 2004·21 cites·6 claims
- 2881US6919257B2Method of forming a capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 19, 2005·17 cites·27 claims
- 2980US11038107B2Semiconductor devices including liners, and related systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Jun 15, 2021·2 cites·23 claims
- 3080US9564576B2Multi-bit ferroelectric memory device and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2015·Granted Feb 7, 2017·2 cites·19 claims
- 3179US9627501B2Graded dielectric structuresMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 3279US2023402082A1Field Effect Transistor Constructions and Methods of Programming Field Effect Transistors to One Of At Least Three Different Programmed StatesMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 3378US8481122B2Methods of forming material over substratesCARLSON CHRIS M·Filed 2006·Granted Jul 9, 2013·4 cites·18 claims
- 3478US7807535B2Methods of forming layers comprising epitaxial siliconMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 5, 2010·4 cites·32 claims
- 3578US6855594B1Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 15, 2005·16 cites·31 claims
- 3677US8299462B2Constructions comprising hafnium oxide and/or zirconium oxideSRIVIDYA CANCHEEPURAM V·Filed 2011·Granted Oct 30, 2012·4 cites·9 claims
- 3777US7023043B2Top electrode in a strongly oxidizing environmentMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 4, 2006·15 cites·35 claims
- 3877US6689657B2Method of forming a capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 10, 2004·13 cites·9 claims
- 3977US6596651B2Method for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·11 cites·71 claims
- 4076US7378354B2Atomic layer deposition methodsMICRON TECHNOLOGY INC·Filed 2006·Granted May 27, 2008·3 cites·13 claims
- 4175US8030168B2Methods of forming DRAM memory cellsMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 4, 2011·4 cites·31 claims
- 4275US6400552B2Capacitor with conductively doped Si-Ge alloy electrodeMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 4, 2002·13 cites·24 claims
- 4374US10439000B2Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 8, 2019·0 cites·17 claims
- 4474US8105896B2Methods of forming capacitorsBHAT VISHWANATH·Filed 2009·Granted Jan 31, 2012·4 cites·13 claims
- 4574US7709326B2Methods of forming layers comprising epitaxial siliconMICRON TECHNOLOGY INC·Filed 2006·Granted May 4, 2010·3 cites·31 claims
- 4674US7635623B2Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 22, 2009·4 cites·43 claims
- 4774US6858894B2Comprising agglomerates of one or more noble metalsMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 22, 2005·12 cites·9 claims
- 4873US7217630B2Methods of forming hafnium oxideMICRON TECHNOLOGY INC·Filed 2004·Granted May 15, 2007·10 cites·17 claims
- 4972US8497566B2Capacitors including conductive TiOxNxBHAT VISHWANATH·Filed 2011·Granted Jul 30, 2013·2 cites·21 claims
- 5071US9269899B1Electronic device, memory cell, and method of flowing electric currentMICRON TECHNOLOGY INC·Filed 2015·Granted Feb 23, 2016·3 cites·35 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →