Inventor · disambiguated record
F. Gealy
Also filed as: GEALY F D · GEALY F DAN
1 granted patent·3 pending applications·6 citations·filing 2003–2006
30Inventor score
Top patents by PatentIndex Score
4 records- 0159US6784083B1Method for reducing physisorption during atomic layer depositionMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 31, 2004·6 cites·25 claims
- 0251US2005279283A1Method for stabilizing high pressure oxidation of a semiconductor deviceGEALY F D·Filed 2005·Application pending·0 cites
- 0351US2007069270A1Top electrode in a strongly oxidizing environmentBASCERI CEM·Filed 2006·Application pending·0 cites
- 0442US2004244689A1Method for reducing physisorption during atomic layer depositionMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →