Inventor · disambiguated record
Fang-Lan Chu
Also filed as: CHU FANG-LAN
7 granted patents·5 pending applications·17 citations·filing 2014–2025
76Inventor score
Top patents by PatentIndex Score
12 records- 0190US9276010B2Dual silicide formation method to embed split gate flash memory in high-k metal gate (HKMG) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 1, 2016·12 cites·20 claims
- 0277US9425206B2Boundary scheme for embedded poly-SiON CMOS or NVM in HKMG CMOS technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·4 cites·19 claims
- 0374US2025316643A1Wafer bonding method and bonded device structureTQIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0473US2025309132A1Wafer bonding method and bonded wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0566US12381158B2Wafer bonding method and bonded device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 0664US2023299041A1Wafer Bonding Method and Bonded Device StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0760US2025336851A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0858US9983257B2Test line patterns in split-gate flash technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·1 cites·20 claims
- 0958US2025155659A1Photonic package and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1056US11600618B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 1152US11069419B2Test line letter for embedded non-volatile memory technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 20, 2021·0 cites·20 claims
- 1244US10163522B2Test line letter for embedded non-volatile memory technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →