Inventor · disambiguated record
Fabio Gualandris
Also filed as: GUALANDRIS FABIO
4 granted patents·113 citations·filing 1986–1995
78Inventor score
Top patents by PatentIndex Score
4 records- 0182US5041885ASurface field effect transistor with depressed source and/or drain areas for ULSI integrated devicesST MICROELECTRONICS SRL·Filed 1990·Granted Aug 20, 1991·73 cites·6 claims
- 0253US4806199A(RIE) Plasma process for making metal-semiconductor ohmic type contactsSGS MICROELETTRONICA SPA·Filed 1986·Granted Feb 21, 1989·23 cites·11 claims
- 0342USRE35827ESurface field effect transistor with depressed source and/or drain areas for ULSI integrated devicesST MICROELECTRONICS SRL·Filed 1995·Granted Jun 23, 1998·11 cites·6 claims
- 0429US5045504ADielectric layer of first interconnection for electronic semiconductor devicesSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Sep 3, 1991·6 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →