Inventor · disambiguated record
Fa-Shen Jiang
Also filed as: JIANG Fa-Shen
47 granted patents·13 pending applications·41 citations·filing 2016–2025
97Inventor score
Top patents by PatentIndex Score
60 records- 0195US11961545B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 0295US11545202B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·3 cites·20 claims
- 0395US11430951B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0494US11856801B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0594US10910560B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·6 cites·20 claims
- 0693US12218005B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·1 cites·20 claims
- 0793US11404638B2Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0893US11152568B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·3 cites·20 claims
- 0991US12310036B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1089US12424256B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 1188US12364171B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1288US2025311646A1Rram structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1387US12414484B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 1487US12232336B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1587US10622555B2Film scheme to improve peeling in chalcogenide based PCRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 14, 2020·6 cites·20 claims
- 1686US12507601B2Thermal dispersion layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 1786US11527717B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 1886US2024373763A1Top-electrode barrier layer for rramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1985US12114582B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 2085US12075636B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2185US10916697B2Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 9, 2021·4 cites·20 claims
- 2285US2025311645A1Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2384US12102019B2Data storage structure for improving memory cell reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 2482US2025081864A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2580US12178147B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 2680US11895933B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 2780US2025140608A1Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2879US12239035B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 2979US12232434B2Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 3079US11963468B2Rram structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3179US11716913B2Data storage structure for improving memory cell reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 3279US10818544B2Method to enhance electrode adhesion stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·2 cites·20 claims
- 3379US10043972B2Conductive-bridging random access memoryWINBOND ELECTRONICS CORP·Filed 2016·Granted Aug 7, 2018·3 cites·9 claims
- 3478US11716915B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 3577US12075626B2Memory window of MFM MOSFET for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3677US2025241211A1Memory device with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3777US2025299936A1Remote plasma ultraviolet enhanced depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3877US2024357835A1Improve memory window of mfm mosfet for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3976US2025194121A1Diffusion barrier layer in top electrode to increase break down voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4075US12261197B2Diffusion barrier layer in top electrode to increase break down voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 4175US11800823B2Method for manufacturing thermal dispersion layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 4274US12295270B2RRAM device with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 6, 2025·0 cites·20 claims
- 4374US11532698B2Diffusion barrier layer in top electrode to increase break down voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·1 cites·20 claims
- 4474US11482668B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 4573US2025176447A1Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4671US2025151635A1Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4770US11991937B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 4868US11723212B2Memory window of MFM MOSFET for small cell sizeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 4967US11894267B2Method for fabricating integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 5066US12334317B2Remote plasma ultraviolet enhanced depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →