Inventor · disambiguated record
Fang-Ting Kuo
Also filed as: KUO FANG-TING
17 granted patents·4 pending applications·10 citations·filing 2013–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21
Top patents by PatentIndex Score
21 records- 0186US11227935B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0285US10431664B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·5 cites·20 claims
- 0383US2025324721A1Partial metal grain size control to improve cmp loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0482US2025366169A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0581US12166104B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0681US9947701B2Low noise device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 0780US2025142848A1Barrier Layer for Metal Insulator Metal CapacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0878US12363987B2Partial metal grain size control to improve CMP loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·9 claims
- 0974US11830889B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 1074US11799014B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 1173US12211890B2Barrier layer for metal insulator metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1271US2025089350A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1370US11094723B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 1470US11011556B2Method of making a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 1569US11978781B2Partial metal grain size control to improve CMP loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 1666US12218181B2Barrier layer for metal insulator metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 4, 2025·0 cites·20 claims
- 1761US10535686B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 1854US9984971B2Methods of forming metal pad structures over TSVS to reduce shorting of upper metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·0 cites·20 claims
- 1950US10050103B2Method of forming semiconductor structures including metal insulator metal capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 2050US9666660B2Semiconductor structures including metal insulator metal capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 30, 2017·0 cites·20 claims
- 2145US10157990B2Semiconductor device with capping structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →