Inventor · disambiguated record
Fang-Wei Lee
Also filed as: LEE FANG-WEI
31 granted patents·18 pending applications·21 citations·filing 2009–2025
94Inventor score
Top patents by PatentIndex Score
49 records- 0197US11462471B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·6 cites·20 claims
- 0296US11476365B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·4 cites·20 claims
- 0390US11855192B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0489US12033863B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·1 cites·20 claims
- 0589US11227794B2Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0689US2025331214A1Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0788US11646234B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 0887US12389619B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 0987US12021125B2High selectivity etching with germanium-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·1 cites·20 claims
- 1085US12334435B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1185US2025366005A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1283US11973129B2Semiconductor device structure with inner spacer layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 1382US12224210B2Method for FinFet fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1481US11031291B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 1581US2025366119A1Dry Etching Of Semiconductor Structures With Fluorine-Containing GasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1681US2025279353A1Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1780US2025105019A1Semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1878US2025185346A1Method For FinFET Fabrication And Structure ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1978US2024243009A1Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US2024347345A1Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US12402394B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2277US12336252B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 2377US12009294B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2477US11605728B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 2577US2025324733A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2677US2025344499A1Stacked transistor channel regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2775US12198939B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 2875US11972974B2Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 2975US2024387693A1Spacer Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3075US2025318195A1Air Inner SpacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3174US11222794B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·1 cites·20 claims
- 3274US2024097011A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3372US11830928B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 3471US11373878B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·0 cites·20 claims
- 3569US12471344B2Dry etching of semiconductor structures with fluorine-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
- 3669US12218219B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·20 claims
- 3768US2023030411A1Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3867US11842927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 3967US2025040238A1Stacked transistor channel regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4066US12376337B2Air inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 29, 2025·0 cites·20 claims
- 4166US2025210372A1Method for manufacturing semiconductor device using etchant composition having high etching selectivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4265US11152491B2Method for forming semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 4364US11107904B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 4464US11056393B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 4563US12266538B2Method for manufacturing semiconductor device using etchant composition having high etching selectivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 4659US2025311327A1Method for manufacturing semiconductor device having complementary field-effect transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4752US10847633B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·0 cites·20 claims
- 4852US2010141160A1Tracking regulator for led load and power regulation method thereofSINERGY POWER SOLUTIONS INC·Filed 2009·Application pending·0 cites
- 4945US11201243B2Nanowire stack GAA device and methods for producing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →