Inventor · disambiguated record
Fang-Liang Lu
Also filed as: LU FANG · LU FANG-LIANG
20 granted patents·2 pending applications·52 citations·filing 2004–2025
91Inventor score
Top patents by PatentIndex Score
22 records- 0194US11776998B2Gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·2 cites·20 claims
- 0294US10332985B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·10 cites·20 claims
- 0393US11233120B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·3 cites·20 claims
- 0485US2024395936A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0584US7452452B2Carbon nanotube nanoelectrode arraysTRUSTEES BOSTON COLLEGE·Filed 2004·Granted Nov 18, 2008·33 cites·20 claims
- 0683US12308371B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 0782US2025311312A1Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0880US12211897B2Gate-all-around transistor with strained channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 0978US12446268B2Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 1078US11031470B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
- 1177US10535737B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·2 cites·20 claims
- 1275US11791410B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1374US10957784B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·1 cites·20 claims
- 1466US11551992B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·0 cites·20 claims
- 1566US11063149B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·20 claims
- 1665US11374115B2Method for forming semiconductor device having boron-doped germanium tin epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 1764US11502197B2Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 1859US10510888B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 1958US10777663B2Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·0 cites·20 claims
- 2056US10804180B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·20 claims
- 2148US10867809B2Laser anneal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2242US10068995B2Semiconductor device including field effect transistor and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →