Inventor · disambiguated record
Fabrice Nemouchi
Also filed as: NEMOUCHI FABRICE
34 granted patents·3 pending applications·230 citations·filing 2008–2025
94Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE30NEMOUCHI FABRICE3GAILLARD FREDERIC-XAVIER2DESPLOBAIN SEBASTIEN1ST MICROELECTRONICS SA1
Top patents by PatentIndex Score
37 records- 0194US8470689B2Method for forming a multilayer structureDESPLOBAIN SEBASTIEN·Filed 2011·Granted Jun 25, 2013·202 cites·13 claims
- 0278US7842612B2Selective formation of a compound comprising a semi-conducting material and a metallic material in a substrate through a germanium oxide layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Nov 30, 2010·8 cites·7 claims
- 0376US8617908B2Method for producing a substrate including a step of thinning with stop when a porous zone is detectedGAILLARD FREDERIC-XAVIER·Filed 2011·Granted Dec 31, 2013·4 cites·23 claims
- 0472US8664104B2Method of producing a device with transistors strained by means of an external layerNEMOUCHI FABRICE·Filed 2012·Granted Mar 4, 2014·4 cites·14 claims
- 0571US11217446B2Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jan 4, 2022·1 cites·16 claims
- 0671US10340361B2Forming of a MOS transistor based on a two-dimensional semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 2, 2019·1 cites·9 claims
- 0771US9269570B2Contact on a heterogeneous semiconductor substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 23, 2016·3 cites·17 claims
- 0861US9548210B2Fabrication method of a transistor with improved field effectCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jan 17, 2017·1 cites·16 claims
- 0960US7972911B1Method for forming metallic materials comprising semi-conductorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted Jul 5, 2011·2 cites·7 claims
- 1059US12408405B2Device comprising spacers including a localised airgap and associated manufacturing methodsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Sep 2, 2025·0 cites·14 claims
- 1159US8586463B2Method for preparing a layer comprising nickel monosilicide NiSi on a substrate comprising siliconNEMOUCHI FABRICE·Filed 2009·Granted Nov 19, 2013·3 cites·20 claims
- 1256US11941485B2Method of making a quantum deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 26, 2024·0 cites·15 claims
- 1356US11929290B2Method of manufacturing microelectronic componentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 12, 2024·0 cites·14 claims
- 1455US2024268239A1Method for producing a superconducting transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1554US12477958B2Method for making an electronic device with superconductor qubit(s) including at least one JoFETCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Granted Nov 18, 2025·0 cites·14 claims
- 1654US9093552B2Manufacturing method for a device with transistors strained by silicidation of source and drain zonesNEMOUCHI FABRICE·Filed 2012·Granted Jul 28, 2015·1 cites·12 claims
- 1754US2023210021A1Method of making superconducting interconnectionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1849US12477785B2Quantum device and method for producing the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Nov 18, 2025·0 cites·19 claims
- 1949US2025313481A1PROCESS FOR MANUFACTURING COBALT SILICIDE CoSi2COMMISSARIAT ENERGIE ATOMIQUE·Filed 2025·Application pending·0 cites
- 2048US11387147B2Method for producing a component by filling a cavity within an electrical isolation area with carbon-based materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 12, 2022·0 cites·6 claims
- 2147US12417919B2Method for producing a superconducting vanadium silicide on a silicon layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Sep 16, 2025·0 cites·10 claims
- 2247US11515148B2Method for producing at least one device in compressive strained semiconductorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 29, 2022·0 cites·10 claims
- 2346US11362181B2Method for manufacturing an electronic component having multiple quantum dotsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jun 14, 2022·0 cites·16 claims
- 2444US10930562B2Internal via with improved contact for upper semi-conductor layer of a 3D circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 2543US9997395B2Fabrication method of a stack of electronic devicesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jun 12, 2018·0 cites·16 claims
- 2643US8822332B2Method for forming gate, source, and drain contacts on a MOS transistorST MICROELECTRONICS SA·Filed 2013·Granted Sep 2, 2014·0 cites·12 claims
- 2742US12402542B2Josephson transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Aug 26, 2025·0 cites·11 claims
- 2842US9911827B2SBFET transistor and corresponding fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Mar 6, 2018·0 cites·14 claims
- 2942US8324073B2Method for producing an electro-mechanical microsystemGAILLARD FREDERIC-XAVIER·Filed 2011·Granted Dec 4, 2012·0 cites·18 claims
- 3041US9831319B2Transistor with MIS connections and fabricating processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Nov 28, 2017·0 cites·14 claims
- 3140US11698488B2Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 11, 2023·0 cites·19 claims
- 3239US11631739B2Transistor having blocks of source and drain silicides near the channelCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Apr 18, 2023·0 cites·20 claims
- 3337US10199276B2Semiconductor and metal alloy interconnections for a 3D circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 5, 2019·0 cites·20 claims
- 3434US11075501B2Process for producing a component comprising III-V materials and contacts compatible with silicon process flowsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 27, 2021·0 cites·30 claims
- 3533US10388653B2Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Aug 20, 2019·0 cites·15 claims
- 3632US10361087B2Process for producing an intermetallic contact based on Ni on InxGa1-xAsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 23, 2019·0 cites·16 claims
- 3730US9379024B2Method for manufacturing a microelectronic device including depositing identical or different metallic layers on the same waferCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jun 28, 2016·0 cites·17 claims
Join the waitlist — get patent alerts
Get an alert when Fabrice Nemouchi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →