Inventor · disambiguated record
Fabian Radulescu
Also filed as: RADULESCU FABIAN
38 granted patents·10 pending applications·115 citations·filing 2005–2024
96Inventor score
Top patents by PatentIndex Score
48 records- 0197US11735538B2Semiconductor having a backside wafer cavity for radio frequency (RF) passive device integration and/or improved cooling and process of implementing the sameCREE INC·Filed 2020·Granted Aug 22, 2023·6 cites·33 claims
- 0296US10971612B2High electron mobility transistors and power amplifiers including said transistors having improved performance and reliabilityCREE INC·Filed 2019·Granted Apr 6, 2021·21 cites·21 claims
- 0394US9847411B2Recessed field plate transistor structuresCREE INC·Filed 2013·Granted Dec 19, 2017·26 cites·33 claims
- 0490US11658234B2Field effect transistor with enhanced reliabilityWOLFSPEED INC·Filed 2021·Granted May 23, 2023·2 cites·24 claims
- 0590US11355600B2High electron mobility transistors having improved drain current drift and/or leakage current performanceCREE INC·Filed 2021·Granted Jun 7, 2022·2 cites·20 claims
- 0689US11887945B2Semiconductor device with isolation and/or protection structuresWOLFSPEED INC·Filed 2020·Granted Jan 30, 2024·2 cites·26 claims
- 0788US10923585B2High electron mobility transistors having improved contact spacing and/or improved contact viasCREE INC·Filed 2019·Granted Feb 16, 2021·6 cites·19 claims
- 0884US11502178B2Field effect transistor with at least partially recessed field plateWOLFSPEED INC·Filed 2020·Granted Nov 15, 2022·1 cites·45 claims
- 0984US10937873B2High electron mobility transistors having improved drain current drift and/or leakage current performanceCREE INC·Filed 2019·Granted Mar 2, 2021·3 cites·21 claims
- 1084US9679981B2Cascode structures for GaN HEMTsCREE INC·Filed 2013·Granted Jun 13, 2017·7 cites·22 claims
- 1182US10332817B1Semiconductor die with improved ruggednessCREE INC·Filed 2017·Granted Jun 25, 2019·3 cites·22 claims
- 1282US8970010B2Wafer-level die attach metallizationCREE INC·Filed 2013·Granted Mar 3, 2015·5 cites·21 claims
- 1382US8357571B2Methods of forming semiconductor contactsCREE INC·Filed 2010·Granted Jan 22, 2013·8 cites·19 claims
- 1481US11075271B2Stepped field plates with proximity to conduction channel and related fabrication methodsCREE INC·Filed 2019·Granted Jul 27, 2021·3 cites·29 claims
- 1579US9343561B2Semiconductor device with self-aligned ohmic contactsCREE INC·Filed 2014·Granted May 17, 2016·5 cites·31 claims
- 1678US9202703B2Ni-rich Schottky contactCREE INC·Filed 2012·Granted Dec 1, 2015·5 cites·28 claims
- 1777US9343543B2Gate contact for a semiconductor device and methods of fabrication thereofCREE INC·Filed 2015·Granted May 17, 2016·2 cites·17 claims
- 1874US9536783B2Wafer-level die attach metallizationCREE INC·Filed 2015·Granted Jan 3, 2017·2 cites·8 claims
- 1971US10886189B2Semiconductor die with improved ruggednessCREE INC·Filed 2019·Granted Jan 5, 2021·1 cites·21 claims
- 2071US9608078B2Semiconductor device with improved field plateCREE INC·Filed 2014·Granted Mar 28, 2017·2 cites·17 claims
- 2170US11842997B2Methods for pillar connection on frontside and passive device integration on backside of dieWOLFSPEED INC·Filed 2022·Granted Dec 12, 2023·0 cites·30 claims
- 2270US10811370B2Packaged electronic circuits having moisture protection encapsulation and methods of forming sameCREE INC·Filed 2018·Granted Oct 20, 2020·1 cites·23 claims
- 2369US11587842B2Semiconductor die with improved ruggednessWOLFSPEED INC·Filed 2020·Granted Feb 21, 2023·0 cites·22 claims
- 2465US11682634B2Packaged electronic circuits having moisture protection encapsulation and methods of forming sameWOLFSPEED INC·Filed 2020·Granted Jun 20, 2023·0 cites·16 claims
- 2565US11616136B2High electron mobility transistors and power amplifiers including said transistors having improved performance and reliabilityWOLFSPEED INC·Filed 2021·Granted Mar 28, 2023·0 cites·24 claims
- 2663US11769768B2Methods for pillar connection on frontside and passive device integration on backside of dieWOLFSPEED INC·Filed 2020·Granted Sep 26, 2023·0 cites·32 claims
- 2763US9202903B2Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the sameCREE INC·Filed 2013·Granted Dec 1, 2015·1 cites·12 claims
- 2861US8994182B2Dielectric solder barrier for semiconductor devicesCREE INC·Filed 2012·Granted Mar 31, 2015·1 cites·22 claims
- 2959US11621322B2Die-to-die isolation structures for packaged transistor devicesWOLFSPEED INC·Filed 2020·Granted Apr 4, 2023·0 cites·36 claims
- 3059US2024162304A1Field effect transistor including field platesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Application pending·0 cites
- 3158US12382699B2Plasma-based barrier layer removal method for increasing peak transconductance while maintaining on-state resistance and related devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2022·Granted Aug 5, 2025·0 cites·28 claims
- 3258US2025374585A1High-electron-mobility transistor having group-iii-nitride capping layer separated from contactMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Application pending·0 cites
- 3356US11869964B2Field effect transistors with modified access regionsWOLFSPEED INC·Filed 2021·Granted Jan 9, 2024·0 cites·28 claims
- 3456US2024429120A1Topside Cooling for Semiconductor DeviceWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3556US2025248064A1Thermally Stable FinFET Device for High Temperature OperationWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3656US2025246428A1Anti-Reflective Layer for Protecting an N-Polar Group III-Nitride Semiconductor StructureWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3756US2024429122A1Thermally conductive interposer, a device implementing a thermally conductive interposer, and processes for implementing the sameWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3855US2024266348A1Flip-chip field effect transistor layouts and structuresWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3954US11533025B2Integrated doherty amplifier with added isolation between the carrier and the peaking transistorsWOLFSPEED INC·Filed 2020·Granted Dec 20, 2022·0 cites·13 claims
- 4052US12464759B2High electron mobility transistors having reduced drain current drift and methods of fabricating such devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 4152US9356129B2Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the sameCREE INC·Filed 2015·Granted May 31, 2016·0 cites·20 claims
- 4252US8969927B2Gate contact for a semiconductor device and methods of fabrication thereofCREE INC·Filed 2013·Granted Mar 3, 2015·0 cites·27 claims
- 4350US2023075505A1Metal pillar connection topologies for heterogeneous packagingWOLFSPEED INC·Filed 2021·Application pending·0 cites
- 4447US2022384290A1Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methodsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 4545US9245890B2Method of manufacturing precise semiconductor contactsCREE INC·Filed 2014·Granted Jan 26, 2016·0 cites·22 claims
- 4644US7276777B2Thin film resistor and method of making the sameTRIQUINT SEMICONDUCTOR INC·Filed 2005·Granted Oct 2, 2007·0 cites·15 claims
- 4743US9269662B2Using stress reduction barrier sub-layers in a semiconductor dieCREE INC·Filed 2012·Granted Feb 23, 2016·0 cites·20 claims
- 4843US2021359118A1Group III-Nitride High-Electron Mobility Transistors Configured with Recessed Source and/or Drain Contacts for Reduced On State Resistance and Process for Implementing the SameCREE INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →