Inventor · disambiguated record
Fangfang Ren
Also filed as: REN FANGFANG
6 granted patents·1 pending application·1 citations·filing 2024–2025
64Inventor score
Files withNANJING UNIVERSITY7
Top patents by PatentIndex Score
7 records- 0186US12146908B1In-situ testing system for semiconductor device in aerospace irradiation environmentNANJING UNIVERSITY·Filed 2024·Granted Nov 19, 2024·1 cites·8 claims
- 0262US12455391B2Reset-type charge-sensitive amplifying circuit, and method for amplifying and resetting data signalNANJING UNIVERSITY·Filed 2025·Granted Oct 28, 2025·0 cites·15 claims
- 0360US12295154B1Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereofNANJING UNIVERSITY·Filed 2024·Granted May 6, 2025·0 cites·7 claims
- 0458US12287360B1GaN HEMT device for irradiation damage detection and detection and manufacturing method thereforNANJING UNIVERSITY·Filed 2024·Granted Apr 29, 2025·0 cites·6 claims
- 0557US12300746B2GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereofNANJING UNIVERSITY·Filed 2024·Granted May 13, 2025·0 cites·3 claims
- 0655US12392816B1Pulse laser irradiation wide bandgap power deviceNANJING UNIVERSITY·Filed 2024·Granted Aug 19, 2025·0 cites·5 claims
- 0755US2025169162A1IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION CAPABILITY AND FABRICATING METHOD THEREOFNANJING UNIVERSITY·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →