Inventor · disambiguated record
Fabrice Semond
Also filed as: SEMOND FABRICE
8 granted patents·3 pending applications·104 citations·filing 1997–2016
86Inventor score
Files withCENTRE NAT RECH SCIENT5COMMISSARIAT ENERGIE ATOMIQUE1COMMISSARITA A L EN ATOMIQUE1PICOGIGA INTERNAT SAS1ST MICROELECTRONICS SA1
Top patents by PatentIndex Score
11 records- 0184US7785991B2Process for integrating a III-N type component on a (001) nominal silicium substrateST MICROELECTRONICS SA·Filed 2007·Granted Aug 31, 2010·13 cites·10 claims
- 0276US7767307B2Preparation method of a coating of gallium nitrideCENTRE NAT RECH SCIENT·Filed 2007·Granted Aug 3, 2010·4 cites·20 claims
- 0376US6445009B1Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackingsCENTRE NAT RECH SCIENT·Filed 2000·Granted Sep 3, 2002·33 cites·28 claims
- 0473US10522346B2Production of a semiconductor support based on group III nitridesCENTRE NAT RECH SCIENT·Filed 2016·Granted Dec 31, 2019·2 cites·28 claims
- 0569US6274234B1Very long and highly stable atomic wires, method for making these wires, application in nano-electronicsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Aug 14, 2001·44 cites·14 claims
- 0665US7273664B2Preparation method of a coating of gallium nitrideCENTRE NAT RECH SCIENT·Filed 2001·Granted Sep 25, 2007·8 cites·23 claims
- 0747US7776154B2Preparation method of a coating of gallium nitridePICOGIGA INTERNAT SAS·Filed 2007·Granted Aug 17, 2010·0 cites·18 claims
- 0839US2011084310A1Method for obtaining a structured material with through openings, in particular nitrides of type iii semiconductors structured according to photonic crystal patternsUNIV PARIS SUD·Filed 2009·Application pending·0 cites
- 0938US10361077B2Method for producing a passivated semiconductor structure based on group III nitrides, and one such structureCENTRE NAT RECH SCIENT·Filed 2016·Granted Jul 23, 2019·0 cites·9 claims
- 1036US2009294776A1Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining SameCOMMISSARITA A L EN ATOMIQUE·Filed 2006·Application pending·0 cites
- 1135US2004132242A1Method for the production of one-dimensional nanostructures and nanostructures obtained according to said methodFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →