Inventor · disambiguated record
Feng-Ming Chang
Also filed as: CHANG FENG · CHANG FENG-MING
79 granted patents·61 pending applications·442 citations·filing 2006–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD114TAIWAN SEMICONDUCTOR MFG8CHANG FENG-MING5SUNONWEALTH ELECTR MACH IND CO3WISTRON NEWEB CORP3
Top patents by PatentIndex Score
140 records- 0198US12046276B2SRAM design with four-poly-pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·3 cites·20 claims
- 0298US11205474B1SRAM design with four-poly-pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 21, 2021·9 cites·20 claims
- 0398US10050045B1SRAM cell with balanced write portTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·33 cites·20 claims
- 0498US8004042B2Static random access memory (SRAM) cell and method for forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·183 cites·17 claims
- 0597US11657869B2SRAM design with four-poly-pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 0697US9620509B1Static random access memory device with vertical FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·30 cites·20 claims
- 0796US11527539B2Four-poly-pitch SRAM cell with backside metal tracksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·6 cites·20 claims
- 0895US8315085B1SRAM timing tracking circuitCHANG FENG-MING·Filed 2011·Granted Nov 20, 2012·36 cites·20 claims
- 0994US11552084B2Shared bit lines for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
- 1094US11444197B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 1194US8570789B2SRAM timing tracking circuitCHANG FENG-MING·Filed 2011·Granted Oct 29, 2013·27 cites·20 claims
- 1291US12367924B2SRAM design with four-poly-pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1391US2025322869A1SRAM Design with Four-Poly-PitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1490US11942145B2Static random access memory layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
- 1588US8441829B2Stable SRAM cellHUANG HUAI-YING·Filed 2010·Granted May 14, 2013·13 cites·20 claims
- 1687US2025365917A1Interconnect structures for integration of memory cells and logic cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1787US2025374503A1Memory device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1886US2025359002A1Bit line structure for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1986US2025359000A1Static Random-Access Memory Device with Enhanced Isolation Structure and Increased Packing DensityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2085US7535751B2Dual-port SRAM deviceTAIWAN SEMIOCONDUCTOR MFG CO L·Filed 2007·Granted May 19, 2009·30 cites·20 claims
- 2184US2025365916A1Multi-port sram cell with metal interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2284US2024196585A1Methods, Structures and Devices for Intra-Connection StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2383US2025374501A1Memory device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2483US2025349350A1Memory devices having middle strap areas for routing power signalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2583US2025356910A1Multi-port sram structures with cell size optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2682US12367925B2Static random access memory layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2782US8492215B2Static random access memory (SRAM) cell and method for forming sameYANG LIE-YONG·Filed 2011·Granted Jul 23, 2013·6 cites·20 claims
- 2881US12495571B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
- 2981US9431066B1Circuit having a non-symmetrical layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·6 cites·20 claims
- 3081US2025359172A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3181US2025359003A1Memory device with multiple memory cell architecturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3281US2025365914A1Varying the po space in semiconductor layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3381US2025308582A1Static random access memory layoutTAIWAN SEMICONDUCTGOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3480US8766376B2Static random access memory (SRAM) cell and method for forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 1, 2014·4 cites·20 claims
- 3580US2025359006A1Connection Between Gate Structure And Source/Drain FeatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3680US2025351325A1Memory devices with differently sized active regions in periphery circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3779US12190943B2SRAM devices with reduced coupling capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 3879US2025349677A1High performance memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3978US2025351320A1Memory device with jogged backside metal linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4078US2025351324A1Reduction of size of edge cell region in memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4177US8883289B2Fluid philicity/ phobicity adjustable surface structureTSAO HENG-KWONG·Filed 2011·Granted Nov 11, 2014·8 cites·11 claims
- 4277US2025048613A1Static Random-Access Memory Device with Enhanced Isolation Structure and Increased Packing DensityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4377US2023328948A1Sram cell with balanced write portTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4477US2025120059A1Bit line structure for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4576US10977409B1Apparatus and method of generating a layout for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·1 cites·20 claims
- 4676US10840251B2Memory device and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
- 4776US2025357276A1Semiconductor Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4875US12193205B2Memory device and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 4975US12009428B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 5075US11937415B2Fin-based well straps for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
Showing the top 50 of 140 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →