Inventor · disambiguated record
Ferruccio Frisina
Also filed as: FRISINA FERRUCCIO
94 granted patents·4 pending applications·1,334 citations·filing 1988–2017
99Inventor score
Files withST MICROELECTRONICS SRL45SGS THOMSON MICROELECTRONICS26CONS RIC MICROELETTRONICA11FRISINA FERRUCCIO4GUARNERA ALFIO3
Top patents by PatentIndex Score
98 records- 0196US6300171B1Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structureST MICROELECTRONICS SRL·Filed 1999·Granted Oct 9, 2001·158 cites·11 claims
- 0293US6391723B1Fabrication of VDMOS structure with reduced parasitic effectsST MICROELECTRONICS SRL·Filed 2000·Granted May 21, 2002·72 cites·29 claims
- 0389US5817546AProcess of making a MOS-technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 6, 1998·86 cites·30 claims
- 0487US6586798B1High voltage MOS-gated power deviceST MICROELECTRONICS SRL·Filed 1999·Granted Jul 1, 2003·58 cites·42 claims
- 0586US9406504B2Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide waferST MICROELECTRONICS SRL·Filed 2012·Granted Aug 2, 2016·7 cites·17 claims
- 0686US8653590B2Vertical-conduction integrated electronic device and method for manufacturing thereofFRISINA FERRUCCIO·Filed 2011·Granted Feb 18, 2014·7 cites·34 claims
- 0786US6228719B1MOS technology power device with low output resistance and low capacitance, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted May 8, 2001·65 cites·19 claims
- 0886US5981343ASingle feature size mos technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 9, 1999·43 cites·35 claims
- 0985US8921211B2Vertical-conduction integrated electronic device and method for manufacturing thereofST MICROELECTRONICS SRL·Filed 2014·Granted Dec 30, 2014·5 cites·6 claims
- 1085US7498619B2Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing processST MICROELECTRONICS SRL·Filed 2006·Granted Mar 3, 2009·12 cites·11 claims
- 1184US6404010B2MOS technology power deviceST MICROELECTRONICS SRL·Filed 2001·Granted Jun 11, 2002·36 cites·10 claims
- 1282US10153207B2Method for manufacturing a silicon carbide wafer using a susceptor having draining openingsST MICROELECTRONICS SRL·Filed 2016·Granted Dec 11, 2018·3 cites·17 claims
- 1381US7875936B2Power MOS electronic device and corresponding realizing methodST MICROELECTRONICS SRL·Filed 2005·Granted Jan 25, 2011·6 cites·13 claims
- 1481US7569883B2Switching-controlled power MOS electronic deviceST MICROELECTRONICS SRL·Filed 2005·Granted Aug 4, 2009·7 cites·12 claims
- 1580US7560368B2Insulated gate planar integrated power device with co-integrated Schottky diode and processST MICROELECTRONICS SRL·Filed 2006·Granted Jul 14, 2009·6 cites·2 claims
- 1680US6828598B1Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser deviceST MICROELECTRONICS SRL·Filed 2000·Granted Dec 7, 2004·19 cites·16 claims
- 1779US6841836B2Integrated device with Schottky diode and MOS transistor and related manufacturing processST MICROELECTRONICS SRL·Filed 2003·Granted Jan 11, 2005·22 cites·7 claims
- 1878US5900662AMOS technology power device with low output resistance and low capacitance, and related manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1996·Granted May 4, 1999·45 cites·65 claims
- 1978US5631483APower device integrated structure with low saturation voltageST MICROELECTRONICS SRL·Filed 1995·Granted May 20, 1997·45 cites·15 claims
- 2078US4916085AMOS power structure with protective device against overvoltages and manufacturing process thereforSGS MICROELETTRONICA SPA·Filed 1989·Granted Apr 10, 1990·35 cites·2 claims
- 2174US5670392AProcess for manufacturing high-density MOS-technology power devicesST MICROELECTRONICS SRL·Filed 1995·Granted Sep 23, 1997·41 cites·24 claims
- 2273US8895370B2Vertical conduction power electronic device and corresponding realization methodST MICROELECTRONICS SRL·Filed 2013·Granted Nov 25, 2014·2 cites·19 claims
- 2372US9099322B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2012·Granted Aug 4, 2015·2 cites·10 claims
- 2472US6943390B2High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the sameST MICROELECTRONICS SRL·Filed 2002·Granted Sep 13, 2005·19 cites·10 claims
- 2571US5886381AMOS integrated device comprising a gate protection diodeCONS RIC MICROELETTRONICA·Filed 1996·Granted Mar 23, 1999·31 cites·26 claims
- 2670US9018635B2Integrated electronic device with edge-termination structure and manufacturing method thereofFRISINA FERRUCCIO·Filed 2011·Granted Apr 28, 2015·2 cites·20 claims
- 2770US7838927B2Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2008·Granted Nov 23, 2010·4 cites·20 claims
- 2870US6326271B2Asymmetric MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Dec 4, 2001·14 cites·8 claims
- 2968US7871880B2Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devicesST MICROELECTRONICS SRL·Filed 2008·Granted Jan 18, 2011·3 cites·21 claims
- 3068US5981998ASingle feature size MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Nov 9, 1999·18 cites·32 claims
- 3167US8455318B2Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor deviceGUARNERA ALFIO·Filed 2006·Granted Jun 4, 2013·2 cites·35 claims
- 3267US7790520B2Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power deviceST MICROELECTRONICS SRL·Filed 2009·Granted Sep 7, 2010·2 cites·14 claims
- 3365US8012832B2Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2008·Granted Sep 6, 2011·3 cites·24 claims
- 3464US8344449B2Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtainedST MICROELECTRONICS SRL·Filed 2009·Granted Jan 1, 2013·2 cites·26 claims
- 3564US6051862AMOS-technology power device integrated structureSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Apr 18, 2000·21 cites·101 claims
- 3664US6040609AProcess for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltagesST MICROELECTRONICS SRL·Filed 1998·Granted Mar 21, 2000·26 cites·18 claims
- 3762US8304311B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2006·Granted Nov 6, 2012·1 cites·34 claims
- 3862US7304335B2Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down densityST MICROELECTRONICS SRL·Filed 2006·Granted Dec 4, 2007·2 cites·7 claims
- 3962US5933733AZero thermal budget manufacturing process for MOS-technology power devicesSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Aug 3, 1999·24 cites·53 claims
- 4061US8039898B2Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power deviceST MICROELECTRONICS SRL·Filed 2007·Granted Oct 18, 2011·1 cites·34 claims
- 4161US6222232B1Asymmetric MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Apr 24, 2001·18 cites·31 claims
- 4261US6054737AHigh density MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 25, 2000·16 cites·27 claims
- 4361US5065213AIntegrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Nov 12, 1991·16 cites·2 claims
- 4460US5933734AHigh speed MOS-technology power device integrated structure, and related manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 3, 1999·22 cites·7 claims
- 4560US5874338AMOS-technology power device and process of making sameSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Feb 23, 1999·20 cites·34 claims
- 4660US5118635AIntegrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Jun 2, 1992·16 cites·2 claims
- 4759US5227315AProcess of introduction and diffusion of platinum ions in a slice of siliconCONS RIC MICROELETTRONICA·Filed 1991·Granted Jul 13, 1993·37 cites·13 claims
- 4858US9911810B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceST MICROELECTRONICS SRL·Filed 2017·Granted Mar 6, 2018·0 cites·15 claims
- 4958US7067363B2Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down densityST MICROELECTRONICS SRL·Filed 2003·Granted Jun 27, 2006·7 cites·13 claims
- 5057US7892923B2Power field effect transistor and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2008·Granted Feb 22, 2011·1 cites·23 claims
Showing the top 50 of 98 patent records by PatentIndex Score.
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