Inventor · disambiguated record
Felix Holzmüller
Also filed as: HOLZMÜLLER FELIX
2 granted patents·3 citations·filing 2021–2024
37Inventor score
Files withGLOBALFOUNDRIES US INC2
Top patents by PatentIndex Score
2 records- 0191US11888062B2Extended-drain metal-oxide-semiconductor devices with a silicon-germanium layer beneath a portion of the gateGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 30, 2024·3 cites·20 claims
- 0261US12328926B1Structures for a field-effect transistor that include a spacer structureGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →