Inventor · disambiguated record
Fei-Lung Lai
Also filed as: LAI FEI-LUNG
41 granted patents·4 pending applications·360 citations·filing 2012–2025
97Inventor score
Top patents by PatentIndex Score
45 records- 0198US9389199B2Backside sensing bioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 12, 2016·82 cites·17 claims
- 0298US9080969B2Backside CMOS compatible BioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 14, 2015·37 cites·20 claims
- 0398US8728844B1Backside CMOS compatible bioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 20, 2014·140 cites·20 claims
- 0497US9689835B2Amplified dual-gate bio field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·26 cites·20 claims
- 0597US9567209B1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
- 0696US9459224B1Gas sensor, integrated circuit device using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·18 cites·17 claims
- 0795US9976982B2Backside sensing BioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·7 cites·20 claims
- 0892US10094801B2Amplified dual-gate bio field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·4 cites·20 claims
- 0990US9709525B2Backside CMOS compatible BioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·29 claims
- 1090US9121820B2Top-down fabrication method for forming a nanowire transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 1, 2015·11 cites·20 claims
- 1189US10429341B2Method of using integrated electro-microfluidic probe cardTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 1, 2019·3 cites·20 claims
- 1287US10654707B2Method of stiction prevention by patterned anti-stiction layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·2 cites·20 claims
- 1385US12151932B2Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 1485US2025102460A1Biofet with increased sensing areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1583US10618804B2Manufacturing method of semiconductor structure including heaterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 14, 2020·1 cites·20 claims
- 1683US10035700B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·1 cites·20 claims
- 1782US9933388B2Integrated biosensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·3 cites·20 claims
- 1881US8723123B2Light detector with Ge filmKALNITSKY ALEXANDER·Filed 2012·Granted May 13, 2014·2 cites·19 claims
- 1980US2025243051A1Bypass structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2077US9488615B2Biosensor with a sensing surface on an interlayer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·3 cites·20 claims
- 2175US11814283B2Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 2275US11703475B2Method of using integrated electro-microfluidic probe cardTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 18, 2023·0 cites·20 claims
- 2374US11713242B2MEMS device with dummy-area utilization for pressure enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 2474US11254564B2Semiconductor manufacturing method and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 2572US11542151B2MEMS apparatus with anti-stiction layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 2671US12297097B2Bypass structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 2771US12216077B2BioFET device having a metal crown structure as a sensing layer disposed on an oxide layer formed under a channel region of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 4, 2025·0 cites·20 claims
- 2871US11148936B2CMOS-MEMS structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·19 claims
- 2969US9523642B2Integrated electro-microfluidic probe card, system and method for using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Dec 20, 2016·1 cites·20 claims
- 3068US11099152B2Backside CMOS compatible BioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 3168US11040870B2Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 3268US10184912B2Backside sensing BioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 22, 2019·0 cites·20 claims
- 3367US11084713B2Bypass structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 3467US10508027B2CMOS-MEMS structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·15 claims
- 3565US11174158B2MEMS device with dummy-area utilization for pressure enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 3665US10640366B2Bypass structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·0 cites·20 claims
- 3765US10046965B2CMOS-MEMS structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 3864US10745268B2Method of stiction prevention by patterned anti-stiction layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 18, 2020·0 cites·20 claims
- 3962US9630831B1Semiconductor sensing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·0 cites·20 claims
- 4061US10473616B2Backside CMOS compatible BioFET with no plasma induced damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·0 cites·20 claims
- 4160US11027310B2Fluid deposition apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 8, 2021·0 cites·20 claims
- 4260US10823696B2Method of fabricating a biological field-effect transistor (BioFET) with increased sensing areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·0 cites·16 claims
- 4356US2024409395A1Semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4455US10155244B2Fluid deposition appartus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 18, 2018·0 cites·20 claims
- 4555US2014264468A1Biofet with increased sensing areaTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →