Inventor · disambiguated record
Fengwen Mu
Also filed as: MU FENGWEN
1 granted patent·3 pending applications·0 citations·filing 2021–2023
11Inventor score
Files withTJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECH CO LTD3INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES1
Top patents by PatentIndex Score
4 records- 0156US12278104B2Multi-layer semiconductor material structure and preparation method thereofINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2021·Granted Apr 15, 2025·0 cites·16 claims
- 0252US2025122644A1Preparation method for composite substrateTJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECH CO LTD·Filed 2023·Application pending·0 cites
- 0346US2024426026A1Composite silicon carbide substrate and preparation method thereforTJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECH CO LTD·Filed 2023·Application pending·0 cites
- 0442US2025185328A1Composite silicon carbide substrate and preparation method thereforTJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECH CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →