Inventor · disambiguated record
Feng-Chien Tsai
Also filed as: TSAI FENG-CHIEN
12 granted patents·7 pending applications·6 citations·filing 2015–2024
84Inventor score
Top patents by PatentIndex Score
19 records- 0192US12202017B2Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2023·Granted Jan 21, 2025·4 cites·17 claims
- 0288US12491542B2Methods for cleaning the pull cable of an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·9 claims
- 0387US12491541B2Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·12 claims
- 0486US12502696B2Methods for cleaning the pull cable of an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 0580US12398487B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeGLOBALWAFERS CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·15 claims
- 0678US2024309543A1Methods of growing single crystal ingots using susceptor assembly with sacrifice ringGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0777US11111602B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Sep 7, 2021·2 cites·9 claims
- 0875US2025129512A1Methods for determining suitability of czochralski growth conditions for producing substrates for epitaxyGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0973US12291795B2Single crystal growth susceptor assembly with sacrifice ringGLOBALWAFERS CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 1070US11753741B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeGLOBALWAFERS CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·10 claims
- 1165US12428750B2Ingot puller apparatus having silicon feed tubes with kick platesGLOBALWAFERS CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·9 claims
- 1265US12227874B2Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxyGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·12 claims
- 1357US10988859B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Apr 27, 2021·0 cites·8 claims
- 1456US2024392467A1Methods for adding a plurality of dopant batches to an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1553US2024240355A1Methods for producing single crystal silicon wafers for insulated gate bipolar transistorsGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1645US11959189B2Process for preparing ingot having reduced distortion at late body lengthGLOBALWAFERS CO LTD·Filed 2020·Granted Apr 16, 2024·0 cites·22 claims
- 1742US2020002840A1Systems for producing a monocrystalline ingot that involve monitoring neck growth moving averageGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
- 1842US2020002839A1Monitoring a moving average of the ingot neck pull rate to control the quality of the neck for ingot growthGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
- 1942US2020002838A1Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rateGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →