Inventor · disambiguated record

Feng-Cheng Yang

Also filed as: YANG FENG · YANG FENG-CHENG

223 granted patents·66 pending applications·466 citations·filing 2003–2025

99Inventor score

Technology areasH10P H10D H10W H10B H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD268 PIXART IMAGING INC8 FUTUREWEI TECHNOLOGIES INC6 TAIWAN SEMICONDUCTOR MFG2 ASUSTEK COMP INC1

Top patents by PatentIndex Score

289 records

0199US11587823B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·9 cites·20 claims
0299US11495618B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·5 cites·20 claims
0399US11423966B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·23 cites·20 claims
0499US11355516B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·11 cites·20 claims
0598US11791335B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·4 cites·20 claims
0698US11776602B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·6 cites·20 claims
0798US11647634B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 9, 2023·4 cites·20 claims
0898US11616142B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·4 cites·20 claims
0998US11527553B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
1098US11189705B2Methods of reducing parasitic capacitance in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
1198US10522642B2Semiconductor device with air-spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·30 cites·20 claims
1298US9570556B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·27 cites·20 claims
1397US11903216B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
1497US11855097B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
1597US11856743B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
1697US11631746B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·3 cites·20 claims
1796US11984489B2Air spacer for a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
1896US11910616B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
1996US11862713B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
2096US11805652B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·2 cites·20 claims
2196US11744080B2Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 29, 2023·3 cites·20 claims
2296US10276691B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
2396US10217815B1Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 26, 2019·10 cites·20 claims
2496US10141231B1FinFET device with wrapped-around epitaxial structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·13 cites·20 claims
2596US9942463B2Camera device without image displaying functionPIXART IMAGING INC·Filed 2014·Granted Apr 10, 2018·65 cites·13 claims
2696US9748389B1Method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·12 cites·20 claims
2795US11195951B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·8 cites·20 claims
2895US10483266B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·9 cites·20 claims
2995US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
3094US12027412B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·1 cites·20 claims
3194US11677027B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
3294US11355641B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 7, 2022·2 cites·20 claims
3394US10529725B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·6 cites·20 claims
3493US11901408B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
3593US11456295B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
3693US11437469B2Reducing parasitic capacitance in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·3 cites·20 claims
3793US11018134B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 25, 2021·6 cites·20 claims
3893US9812576B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·8 cites·20 claims
3992US11723199B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·2 cites·20 claims
4092US10985167B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·4 cites·20 claims
4192US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
4292US10283624B1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·7 cites·20 claims
4392US2025365971A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4491US12376310B2Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·1 cites·20 claims
4591US11728223B2Semiconductor device and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·4 cites·20 claims
4691US11574929B23D ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
4791US11569264B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
4891US10923565B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·5 cites·20 claims
4990US11063152B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
5090US10497628B2Methods of forming epitaxial structures in fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·20 claims

Showing the top 50 of 289 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →