Inventor · disambiguated record
Fengyan Zhang
Also filed as: ZHANG FENGYAN
89 granted patents·10 pending applications·1,911 citations·filing 1999–2011
99Inventor score
Top patents by PatentIndex Score
99 records- 0198US6849891B1RRAM memory cell electrodesSHARP LAB OF AMERICA INC·Filed 2003·Granted Feb 1, 2005·250 cites·14 claims
- 0297US7208372B2Non-volatile memory resistor cell with nanotip electrodeSHARP LAB OF AMERICA INC·Filed 2005·Granted Apr 24, 2007·48 cites·13 claims
- 0397US7148533B2Memory resistance film with controlled oxygen contentSHARP LAB OF AMERICA INC·Filed 2005·Granted Dec 12, 2006·63 cites·21 claims
- 0497US7029924B2Buffered-layer memory cellSHARP LAB OF AMERICA INC·Filed 2004·Granted Apr 18, 2006·129 cites·12 claims
- 0596US6441417B1Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Aug 27, 2002·98 cites·13 claims
- 0695US7635600B2Photovoltaic structure with a conductive nanowire array electrodeSHARP LAB OF AMERICA INC·Filed 2005·Granted Dec 22, 2009·31 cites·18 claims
- 0794US9371226B2Methods for forming particlesFOX ROBERT V·Filed 2011·Granted Jun 21, 2016·20 cites·15 claims
- 0894US7256429B2Memory cell with buffered-layerSHARP LAB OF AMERICA INC·Filed 2005·Granted Aug 14, 2007·34 cites·15 claims
- 0994US6955992B2One mask PT/PCMO/PT stack etching process for RRAM applicationsSHARP LAB OF AMERICA INC·Filed 2003·Granted Oct 18, 2005·75 cites·17 claims
- 1093US6972238B2Oxygen content system and method for controlling memory resistance propertiesSHARP LAB OF AMERICA INC·Filed 2003·Granted Dec 6, 2005·42 cites·23 claims
- 1193US6531324B2MFOS memory transistor & method of fabricating sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Mar 11, 2003·62 cites·16 claims
- 1292US6457479B1Method of metal oxide thin film cleaningSHARP LAB OF AMERICA INC·Filed 2001·Granted Oct 1, 2002·57 cites·1 claims
- 1391US7645669B2Nanotip capacitorSHARP LAB OF AMERICA INC·Filed 2007·Granted Jan 12, 2010·20 cites·17 claims
- 1490US7169637B2One mask Pt/PCMO/Pt stack etching process for RRAM applicationsSHARP LAB OF AMERICA INC·Filed 2004·Granted Jan 30, 2007·49 cites·26 claims
- 1590US7141481B2Method of fabricating nano-scale resistance cross-point memory arraySHARP LAB OF AMERICA INC·Filed 2004·Granted Nov 28, 2006·51 cites·18 claims
- 1690US6602720B2Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Aug 5, 2003·45 cites·11 claims
- 1789US7905013B2Method for forming an iridium oxide (IrOx) nanowire neural sensor arraySHARP LAB OF AMERICA INC·Filed 2007·Granted Mar 15, 2011·16 cites·10 claims
- 1889US6774054B1High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM applicationSHARP LAB OF AMERICA INC·Filed 2003·Granted Aug 10, 2004·44 cites·20 claims
- 1988US7438759B2Ambient environment nanowire sensorSHARP LAB OF AMERICA INC·Filed 2005·Granted Oct 21, 2008·14 cites·24 claims
- 2088US7098144B2Iridium oxide nanotubes and method for forming sameSHARP LAB OF AMERICA INC·Filed 2004·Granted Aug 29, 2006·27 cites·23 claims
- 2188US6281022B1Multi-phase lead germanate film deposition methodSHARP LAB OF AMERICA INC·Filed 2000·Granted Aug 28, 2001·43 cites·16 claims
- 2287US7112837B2MFIS ferroelectric memory arraySHARP LAB OF AMERICA INC·Filed 2005·Granted Sep 26, 2006·10 cites·5 claims
- 2387US6906366B2Single transistor ferroelectric transistor structure with high-k insulatorSHARP LAB OF AMERICA INC·Filed 2003·Granted Jun 14, 2005·32 cites·7 claims
- 2487US6534326B1Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin filmsSHARP LAB OF AMERICA INC·Filed 2002·Granted Mar 18, 2003·38 cites·16 claims
- 2585US6468901B1Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Oct 22, 2002·35 cites·13 claims
- 2684US6534871B2Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Mar 18, 2003·27 cites·9 claims
- 2783US6849564B21R1D R-RAM array with floating p-wellSHARP LAB OF AMERICA INC·Filed 2003·Granted Feb 1, 2005·32 cites·26 claims
- 2881US7053403B1Iridium oxide nanostructureSHARP LAB OF AMERICA INC·Filed 2006·Granted May 30, 2006·6 cites·16 claims
- 2980US7029982B1Method of affecting RRAM characteristics by doping PCMO thin filmsSHARP LAB OF AMERICA INC·Filed 2004·Granted Apr 18, 2006·23 cites·10 claims
- 3079US6288420B1Composite iridium-metal-oxygen barrier structure with refractory metal companion barrierSHARP LAB OF AMERICA INC·Filed 2000·Granted Sep 11, 2001·19 cites·12 claims
- 3178US6774004B1Nano-scale resistance cross-point memory arraySHARP LAB OF AMERICA INC·Filed 2003·Granted Aug 10, 2004·22 cites·2 claims
- 3278US6531325B1Memory transistor and method of fabricating sameSHARP LAB OF AMERICA INC·Filed 2002·Granted Mar 11, 2003·18 cites·12 claims
- 3373US7727897B2Method of etching a TE/PCMO stack using an etch stop layerSHARP LAB OF AMERICA INC·Filed 2005·Granted Jun 1, 2010·4 cites·4 claims
- 3473US7446014B2Nanoelectrochemical cellSHARP LAB OF AMERICA INC·Filed 2006·Granted Nov 4, 2008·6 cites·20 claims
- 3573US7255745B2Iridium oxide nanowires and method for forming sameSHARP LAB OF AMERICA INC·Filed 2004·Granted Aug 14, 2007·18 cites·51 claims
- 3673US6649957B2Thin film polycrystalline memory structureSHARP LAB OF AMERICA INC·Filed 2003·Granted Nov 18, 2003·16 cites·13 claims
- 3773US6399521B1Composite iridium barrier structure with oxidized refractory metal companion barrier and method for sameSHARP LAB OF AMERICA INC·Filed 1999·Granted Jun 4, 2002·35 cites·48 claims
- 3872US6462366B1Ferroelectric nonvolatile transistorSHARP LAB OF AMERICA INC·Filed 2000·Granted Oct 8, 2002·15 cites·7 claims
- 3972US6440752B1Electrode materials with improved hydrogen degradation resistance and fabrication methodSHARP LAB OF AMERICA INC·Filed 2001·Granted Aug 27, 2002·12 cites·7 claims
- 4072US6350699B1Method for anisotropic plasma etching using non-chlorofluorocarbon, fluorine-based chemistrySHARP LAB OF AMERICA INC·Filed 2000·Granted Feb 26, 2002·14 cites·18 claims
- 4171US7364924B2Silicon phosphor electroluminescence device with nanotip electrodeSHARP LAB OF AMERICA INC·Filed 2005·Granted Apr 29, 2008·3 cites·16 claims
- 4270US7759150B2Nanorod sensor with single-plane electrodesSHARP LAB OF AMERICA INC·Filed 2007·Granted Jul 20, 2010·4 cites·14 claims
- 4370US6911361B2Low temperature processing of PCMO thin film on Ir substrate for RRAM applicationSHARP LAB OF AMERICA INC·Filed 2003·Granted Jun 28, 2005·18 cites·11 claims
- 4470US6566753B2Composite iridium barrier structure with oxidized refractory metal companion barrierSHARP LAB OF AMERICA INC·Filed 2002·Granted May 20, 2003·10 cites·10 claims
- 4569US7009231B2Single-phase c-axis doped PGO ferroelectric thin filmsSHARP LAB OF AMERICA INC·Filed 2005·Granted Mar 7, 2006·2 cites·18 claims
- 4669US6949435B2Asymmetric-area memory cellSHARP LAB OF AMERICA INC·Filed 2003·Granted Sep 27, 2005·13 cites·21 claims
- 4769US6711049B1One transistor cell FeRAM memory arraySHARP LAB OF AMERICA INC·Filed 2002·Granted Mar 23, 2004·16 cites·16 claims
- 4868US6682995B2Iridium conductive electrode/barrier structure and method for sameSHARP LAB OF AMERICA INC·Filed 2002·Granted Jan 27, 2004·9 cites·7 claims
- 4968US6616857B2C-axis oriented lead germanate filmSHARP LAB OF AMERICA INC·Filed 2001·Granted Sep 9, 2003·8 cites·6 claims
- 5067US6673664B2Method of making a self-aligned ferroelectric memory transistorSHARP LAB OF AMERICA INC·Filed 2001·Granted Jan 6, 2004·11 cites·24 claims
Showing the top 50 of 99 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →