Inventor · disambiguated record
Florian Domengie
Also filed as: DOMENGIE FLORIAN
6 granted patents·1 pending application·10 citations·filing 2013–2018
75Inventor score
Top patents by PatentIndex Score
7 records- 0182US9691871B1Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitrideST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Jun 27, 2017·5 cites·18 claims
- 0275US10101528B2Optical coupling device with a wide bandwidth and reduced power lossesST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Oct 16, 2018·2 cites·16 claims
- 0365US9257518B2Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Feb 9, 2016·2 cites·18 claims
- 0462US9029254B2Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layerST MICROELECTRONICS CROLLES 2·Filed 2013·Granted May 12, 2015·1 cites·12 claims
- 0556US10261252B2Optical coupling device with a wide bandwidth and reduced power lossesST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Apr 16, 2019·0 cites·16 claims
- 0649US10211059B2Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitrideST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 0725US2019259618A1Process for forming a layer of a work function metal for a mosfet gate having a uniaxial grain orientationST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →