Inventor · disambiguated record
Flavio Villa
Also filed as: VILLA FLAVIO · VILLA FLAVIO F
26 granted patents·1 pending application·596 citations·filing 1985–2005
97Inventor score
Top patents by PatentIndex Score
27 records- 0195US5530345AAn integrated hall•effect apparatus for detecting the position of a magnetic elementSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Jun 25, 1996·107 cites·21 claims
- 0287US6472244B1Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor materialSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Oct 29, 2002·46 cites·32 claims
- 0382US5855693AWafer of semiconductor material for fabricating integrated devices, and process for its fabricationSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 5, 1999·63 cites·13 claims
- 0476US6131466AIntegrated piezoresistive pressure sensorSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Oct 17, 2000·31 cites·18 claims
- 0576US5883009AMethod of fabricating integrated semiconductor devices comprising a chemoresistive gas microsensorSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Mar 16, 1999·47 cites·41 claims
- 0675US6232140B1Semiconductor integrated capacitive acceleration sensor and relative fabrication methodSGS THOMSON MICROELECTRONICS·Filed 1999·Granted May 15, 2001·30 cites·24 claims
- 0772US5828124ALow-noise bipolar transistorSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Oct 27, 1998·28 cites·15 claims
- 0869US5583365AFully depleted lateral transistorSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Dec 10, 1996·24 cites·54 claims
- 0969US5434445AJunction-isolated high-voltage MOS integrated deviceSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Jul 18, 1995·25 cites·21 claims
- 1065US6104073ASemiconductor integrated capacitive acceleration sensor and relative fabrication methodSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 15, 2000·20 cites·29 claims
- 1164US6171931B1Wafer of semiconductor material for fabricating integrated devices, and process for its fabricationSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Jan 9, 2001·28 cites·19 claims
- 1261US5756387AMethod for forming zener diode with high time stability and low noiseSGS THOMSON MICROELECTRONICS·Filed 1995·Granted May 26, 1998·27 cites·11 claims
- 1360US5605850AMethod for making a low-noise bipolar transistorST MICROELECTRONICS SRL·Filed 1995·Granted Feb 25, 1997·17 cites·18 claims
- 1452US6417021B1Method of fabricating a piezoresistive pressure sensorSGS THOMSON MICROELECTRONICS·Filed 1999·Granted Jul 9, 2002·12 cites·12 claims
- 1551US4682197APower transistor with spaced subtransistors having individual collectorsSGS MICROELETTRONICA SPA·Filed 1985·Granted Jul 21, 1987·13 cites·8 claims
- 1650US5602417ALow-noise bipolar transistor operating predominantly in the bulk regionST MICROELECTRONICS SRL·Filed 1994·Granted Feb 11, 1997·12 cites·12 claims
- 1750US4979008AVertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction componentsSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Dec 18, 1990·12 cites·4 claims
- 1847US5496761AMethod of making junction-isolated high voltage MOS integrated deviceSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Mar 5, 1996·9 cites·2 claims
- 1946US4672235ABipolar power transistorSGS MICROELETTRONICA SPA·Filed 1985·Granted Jun 9, 1987·7 cites·1 claims
- 2045US5595921AMethod for fabricating a fully depleted lateral transistorSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 21, 1997·8 cites·7 claims
- 2141US4783693ADriver element for inductive loadsSGS MICROELETTRONICA SPA·Filed 1986·Granted Nov 8, 1988·8 cites·2 claims
- 2241US2005208696A1Method for manufacturing a semiconductor pressure sensorST MICROELECTRONICS SRL·Filed 2005·Application pending·0 cites
- 2333US6529140B1Magnetic bi-dimensional position sensorST MICROELECTRONICS SRL·Filed 1998·Granted Mar 4, 2003·9 cites·34 claims
- 2432US5045910AIntegrated power transistor comprising means for reducing thermal stressesSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Sep 3, 1991·1 cites·9 claims
- 2532US4821136APower transistor with self-protection against direct secondary breakdownSGS MICROELETTRONICA SPA·Filed 1987·Granted Apr 11, 1989·3 cites·10 claims
- 2631US4886982APower transistor with improved resistance to direct secondary breakdownSGS MICROELETTRONICA SPA·Filed 1987·Granted Dec 12, 1989·6 cites·5 claims
- 2730US4663647ABuried-resistance semiconductor device and fabrication processSGS MICROELETTRONICA SPA·Filed 1985·Granted May 5, 1987·3 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →