Inventor · disambiguated record
Foroozan Sarah Koushan
Also filed as: KOUSHAN FOROOZAN · KOUSHAN FOROOZAN S · KOUSHAN FOROOZAN SARAH
25 granted patents·1 pending application·119 citations·filing 2012–2022
95Inventor score
Files withADESTO TECHNOLOGIES CORP8MICRON TECHNOLOGY INC8ADESTO TECH CORP3FERROELECTRIC MEMORY GMBH1GALLO ANTONIO R1
Top patents by PatentIndex Score
26 records- 0195US9165644B2Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulseKAMALANATHAN DEEPAK·Filed 2012·Granted Oct 20, 2015·31 cites·24 claims
- 0293US9373786B1Two terminal resistive access devices and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2013·Granted Jun 21, 2016·10 cites·13 claims
- 0392US11537754B1Pseudo physically unclonable functions (PUFS) using one or more addressable arrays of elements having random/pseudo-random valuesADESTO TECHNOLOGIES CORP·Filed 2019·Granted Dec 27, 2022·11 cites·7 claims
- 0489US11417368B2Memory devices including heatersMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 16, 2022·2 cites·24 claims
- 0588US11735267B2Managing pre-programming of a memory device for a reflow processMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 0688US8995167B1Reverse program and erase cycling algorithmsADESTO TECHNOLOGIES CORP·Filed 2013·Granted Mar 31, 2015·12 cites·15 claims
- 0786US11423990B2Multi-stage erase operation for a memory deviceMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 23, 2022·2 cites·20 claims
- 0886US11037638B1Write operations to mitigate write disturbMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 15, 2021·4 cites·20 claims
- 0984US9711719B2Nonvolatile memory elements having conductive structures with semimetals and/or semiconductorsADESTO TECH CORP·Filed 2014·Granted Jul 18, 2017·5 cites·13 claims
- 1084US9252359B2Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2013·Granted Feb 2, 2016·4 cites·30 claims
- 1183US9025396B1Pre-conditioning circuits and methods for programmable impedance elements in memory devicesADESTO TECHNOLOGIES CORP·Filed 2013·Granted May 5, 2015·8 cites·28 claims
- 1281US9734902B2Resistive memory device with ramp-up/ramp-down program/erase pulseADESTO TECH CORP·Filed 2015·Granted Aug 15, 2017·5 cites·16 claims
- 1380US11069412B2Managing pre-programming of a memory device for a reflow processMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 20, 2021·4 cites·19 claims
- 1478US8847192B2Resistive switching devices having alloyed electrodes and methods of formation thereofLEE WEI TI·Filed 2012·Granted Sep 30, 2014·5 cites·32 claims
- 1574US8624219B1Variable impedance memory element structures, methods of manufacture, and memory devices containing the sameJAMESON JOHN ROSS·Filed 2012·Granted Jan 7, 2014·3 cites·46 claims
- 1672US8847191B1Programmable impedance memory elements, methods of manufacture, and memory devices containing the sameGALLO ANTONIO R·Filed 2012·Granted Sep 30, 2014·3 cites·15 claims
- 1769US11694727B2Memory devices including heatersMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 4, 2023·0 cites·20 claims
- 1867US9305643B2Solid electrolyte based memory devices and methods having adaptable read threshold levelsADESTO TECHNOLOGIES CORP·Filed 2013·Granted Apr 5, 2016·3 cites·20 claims
- 1964US11646083B2Multi-stage erase operation for a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted May 9, 2023·0 cites·20 claims
- 2063US8659954B1CBRAM/ReRAM with improved program and erase algorithmsLEWIS DERRIC·Filed 2012·Granted Feb 25, 2014·4 cites·20 claims
- 2162US11609712B2Write operations to mitigate write disturbMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
- 2255US11996131B2Preconditioning operation for a memory cell with a spontaneously-polarizable memory elementFERROELECTRIC MEMORY GMBH·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 2352US9818939B2Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2016·Granted Nov 14, 2017·0 cites·27 claims
- 2450US8953362B2Resistive devices and methods of operation thereofKOUSHAN FOROOZAN SARAH·Filed 2012·Granted Feb 10, 2015·1 cites·28 claims
- 2542US9431101B2Resistive devices and methods of operation thereofADESTO TECH CORP·Filed 2015·Granted Aug 30, 2016·0 cites·26 claims
- 2640US2018033960A1Nonvolatile memory elements having conductive structures with semimetals and/or semiconductorsADESTO TECHNOLOGIES CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →