Inventor · disambiguated record
Frank K. Baker, Jr.
Also filed as: BAKER FRANK K · BAKER FRANK K JR · BAKER FRANK KELSEY · BAKER JR FRANK K
48 granted patents·5 pending applications·1,361 citations·filing 1987–2019
98Inventor score
Top patents by PatentIndex Score
53 records- 0197US8524557B1Integration technique using thermal oxide select gate dielectric for select gate and replacement gate for logicHALL MARK D·Filed 2013·Granted Sep 3, 2013·34 cites·20 claims
- 0296US5712501AGraded-channel semiconductor deviceMOTOROLA INC·Filed 1995·Granted Jan 27, 1998·187 cites·11 claims
- 0394US6444545B1Device structure for storing charge and method thereforeMOTOROLA INC·Filed 2000·Granted Sep 3, 2002·99 cites·11 claims
- 0493US8716089B1Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storageHALL MARK D·Filed 2013·Granted May 6, 2014·18 cites·20 claims
- 0593US5739564ASemiconductor device having a static-random-access memory cellMOTOROLA INC·Filed 1995·Granted Apr 14, 1998·114 cites·20 claims
- 0693US4852062AEPROM device using asymmetrical transistor characteristicsMOTOROLA INC·Filed 1987·Granted Jul 25, 1989·98 cites·14 claims
- 0792US4978626ALDD transistor process having doping sensitive endpoint etchingMOTOROLA INC·Filed 1988·Granted Dec 18, 1990·83 cites·12 claims
- 0890US9276008B2Embedded NVM in a HKMG processFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Mar 1, 2016·6 cites·10 claims
- 0987US10825512B1Memory reads of weight valuesNXP USA INC·Filed 2019·Granted Nov 3, 2020·6 cites·20 claims
- 1087US9318158B2Non-volatile memory using bi-directional resistive elementsBAKER JR FRANK K·Filed 2014·Granted Apr 19, 2016·11 cites·13 claims
- 1187US6812517B2Dielectric storage memory cell having high permittivity top dielectric and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Nov 2, 2004·42 cites·13 claims
- 1286US9129996B2Non-volatile memory (NVM) cell and high-K and metal gate transistor integrationBAKER JR FRANK K·Filed 2013·Granted Sep 8, 2015·9 cites·20 claims
- 1385US7135370B2Dielectric storage memory cell having high permittivity top dielectric and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 14, 2006·35 cites·8 claims
- 1485US6751125B2Gate voltage reduction in a memory readFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·37 cites·38 claims
- 1585US5485420AStatic-random-access memory cell and an integrated circuit having a static-random-access memory cellMOTOROLA INC·Filed 1994·Granted Jan 16, 1996·53 cites·25 claims
- 1682US9054220B2Embedded NVM in a HKMG processFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Jun 9, 2015·5 cites·10 claims
- 1782US6133093AMethod for forming an integrated circuitMOTOROLA INC·Filed 1998·Granted Oct 17, 2000·48 cites·13 claims
- 1881US5741736AProcess for forming a transistor with a nonuniformly doped channelMOTOROLA INC·Filed 1996·Granted Apr 21, 1998·49 cites·27 claims
- 1980US6828618B2Split-gate thin-film storage NVM cellFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Dec 7, 2004·26 cites·22 claims
- 2080US5082794AMethod of fabricating mos transistors using selective polysilicon depositionMOTOROLA INC·Filed 1990·Granted Jan 21, 1992·48 cites·20 claims
- 2178US5037777AMethod for forming a multi-layer semiconductor device using selective planarizationMOTOROLA INC·Filed 1990·Granted Aug 6, 1991·69 cites·13 claims
- 2276US9401207B2Pseudo SRAM using resistive elements for non-volatile storageFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jul 26, 2016·5 cites·20 claims
- 2376US9111865B2Method of making a logic transistor and a non-volatile memory (NVM) cellSHROFF MEHUL D·Filed 2012·Granted Aug 18, 2015·4 cites·20 claims
- 2476US5541132AInsulated gate semiconductor device and method of manufactureMOTOROLA INC·Filed 1995·Granted Jul 30, 1996·46 cites·19 claims
- 2575US9087913B2Integration technique using thermal oxide select gate dielectric for select gate and apartial replacement gate for logicHALL MARK D·Filed 2013·Granted Jul 21, 2015·4 cites·20 claims
- 2672US5377139AProcess forming an integrated circuitMOTOROLA INC·Filed 1992·Granted Dec 27, 1994·29 cites·19 claims
- 2771US8741719B1Integrating formation of a logic transistor and a non-volatile memory cell using a partial replacement gate techniqueHALL MARK D·Filed 2013·Granted Jun 3, 2014·3 cites·20 claims
- 2871US7764550B2Method of programming a non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jul 27, 2010·8 cites·20 claims
- 2969US5024971AMethod for patterning submicron openings using an image reversal layer of materialMOTOROLA INC·Filed 1990·Granted Jun 18, 1991·45 cites·16 claims
- 3066US4984042AMOS transistors using selective polysilicon depositionMOTOROLA INC·Filed 1989·Granted Jan 8, 1991·22 cites·4 claims
- 3164US5101257ASemiconductor device having merged bipolar and MOS transistors and process for making the sameMOTOROLA INC·Filed 1991·Granted Mar 31, 1992·24 cites·19 claims
- 3263US9378812B2Non-volatile memory using bi-directional resistive elementsFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jun 28, 2016·2 cites·12 claims
- 3361US5661048AMethod of making an insulated gate semiconductor deviceMOTOROLA INC·Filed 1995·Granted Aug 26, 1997·23 cites·23 claims
- 3460US8713406B2Erasing a non-volatile memory (NVM) system having error correction code (ECC)MU FUCHEN·Filed 2012·Granted Apr 29, 2014·2 cites·20 claims
- 3560US8669158B2Non-volatile memory (NVM) and logic integrationHALL MARK D·Filed 2013·Granted Mar 11, 2014·1 cites·19 claims
- 3660US8438327B2Recovery scheme for an emulated memory systemSCOULLER ROSS S·Filed 2010·Granted May 7, 2013·1 cites·20 claims
- 3758US5536674AProcess for forming a static-random-access memory cellMOTOROLA INC·Filed 1994·Granted Jul 16, 1996·16 cites·27 claims
- 3856US8341372B2Emulated electrically erasable (EEE) memory and method of operationSCOULLER ROSS S·Filed 2010·Granted Dec 25, 2012·1 cites·20 claims
- 3955US7269090B2Memory access with consecutive addresses corresponding to different rowsFREESCALE SEMICONDUCTOR INC·Filed 2001·Granted Sep 11, 2007·9 cites·35 claims
- 4048US6898129B2Erase of a memory having a non-conductive storage mediumFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 24, 2005·5 cites·23 claims
- 4146US4801555ADouble-implant process for forming graded source/drain regionsMOTOROLA INC·Filed 1987·Granted Jan 31, 1989·15 cites·3 claims
- 4245US4811066ACompact multi-state ROM cellMOTOROLA INC·Filed 1987·Granted Mar 7, 1989·9 cites·11 claims
- 4342US2013346680A1Emulated electrically erasable memory having an address ram for data stored in flash memorySCOULLER ROSS S·Filed 2012·Application pending·0 cites
- 4441US8951863B2Non-volatile memory (NVM) and logic integrationHALL MARK D·Filed 2013·Granted Feb 10, 2015·0 cites·21 claims
- 4541US5275964AMethod for compactly laying out a pair of transistorsMOTOROLA INC·Filed 1993·Granted Jan 4, 1994·6 cites·18 claims
- 4640US7432547B2Non-volatile memory device with improved data retention and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 7, 2008·0 cites·6 claims
- 4740US2018260014A1Systems and methods for controlling memory array power consumptionNXP USA INC·Filed 2017·Application pending·0 cites
- 4837US8473710B2Multiple partitioned emulated electrically erasable (EEE) memory and method of operationSCOULLER ROSS S·Filed 2010·Granted Jun 25, 2013·0 cites·20 claims
- 4937US2003113962A1Non-volatile memory device with improved data retention and method thereforFiled 2001·Application pending·0 cites
- 5036US2013102143A1Method of making a non-volatile memory cell having a floating gateZHANG DA·Filed 2011·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →