Inventor · disambiguated record
Francois H. Fabreguette
Also filed as: FABREGUETTE FRANCOIS · FABREGUETTE FRANCOIS H
14 granted patents·3 pending applications·70 citations·filing 2002–2024
89Inventor score
Top patents by PatentIndex Score
17 records- 0196US11037956B2Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 15, 2021·4 cites·24 claims
- 0295US10777576B1Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 15, 2020·12 cites·48 claims
- 0390US11672120B2Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 6, 2023·2 cites·19 claims
- 0489US11715692B2Microelectronic devices including conductive rails, and related methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 1, 2023·2 cites·16 claims
- 0588US11672118B2Electronic devices comprising adjoining oxide materials and related systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 6, 2023·2 cites·17 claims
- 0686US7426067B1Atomic layer deposition on micro-mechanical devicesUNIV COLORADO·Filed 2002·Granted Sep 16, 2008·45 cites·15 claims
- 0785US11107830B2Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 31, 2021·3 cites·30 claims
- 0883US12150303B2Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Nov 19, 2024·0 cites·18 claims
- 0966US2024425983A1Methods for depositing silicon films by atomic layer depositionMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1063US11631697B2Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 1163US11557608B2Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 17, 2023·0 cites·12 claims
- 1260US2025059646A1Methods for depositing germanium films by atomic layer depositionMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1359US11289501B2Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 29, 2022·0 cites·38 claims
- 1458US2022005930A1Apparatus with multidielectric spacers on conductive regions of stack structures, and related methodsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 1554US10937654B2Methods of doping a silicon-containing material and methods of forming a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 2, 2021·0 cites·24 claims
- 1650US11127830B2Apparatus with multidielectric spacers on conductive regions of stack structures, and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 21, 2021·0 cites·14 claims
- 1750US10964536B2Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratioMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →