Inventor · disambiguated record
Frank Habel
Also filed as: HABEL FRANK
14 granted patents·6 pending applications·279 citations·filing 2005–2022
89Inventor score
Files withFREIBERGER COMPOUND MAT GMBH14LEIBIGER GUNNAR2SCHOLZ FERDINAND2OSRAM OPTO SEMICONDUCTORS GMBH1RHEINMETALL WAFFE MUNlTION GMBH1
Top patents by PatentIndex Score
20 records- 0195US7727332B2Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained therebyFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Jun 1, 2010·267 cites·20 claims
- 0279US9461121B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchFREIBERGER COMPOUND MAT GMBH·Filed 2014·Granted Oct 4, 2016·4 cites·18 claims
- 0367US10309037B2Method for producing III-N templates and the reprocessing thereof and III-N templateFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Jun 4, 2019·1 cites·17 claims
- 0466US7998273B2Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereonFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Aug 16, 2011·2 cites·18 claims
- 0564US12168839B2Growth of A-B crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2020·Granted Dec 17, 2024·0 cites·13 claims
- 0663US10883191B2Method for producing III-N templates and the reprocessing thereof and III-N templateFREIBERGER COMPOUND MAT GMBH·Filed 2019·Granted Jan 5, 2021·0 cites·14 claims
- 0762US8048224B2Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrateFREIBERGER COMPOUND MAT GMBH·Filed 2007·Granted Nov 1, 2011·3 cites·21 claims
- 0861US10662549B2Growth of A-B crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2016·Granted May 26, 2020·0 cites·19 claims
- 0957US2022325435A1Growth of a-b crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2022·Application pending·0 cites
- 1056US8778078B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchSCHOLZ FERDINAND·Filed 2007·Granted Jul 15, 2014·1 cites·25 claims
- 1154US10584427B2Processes for producing III-N single crystals, and III-N single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2018·Granted Mar 10, 2020·0 cites·14 claims
- 1251US9074297B2Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyLEIBIGER GUNNAR·Filed 2008·Granted Jul 7, 2015·1 cites·19 claims
- 1350US2008203408A1PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 1450US2008203409A1PROCESS FOR PRODUCING (Al, Ga)N CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 1549US9896779B2Method for producing III-N single crystals, and III-N single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Feb 20, 2018·0 cites·20 claims
- 1645US9115444B2Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereonSCHOLZ FERDINAND·Filed 2010·Granted Aug 25, 2015·0 cites·13 claims
- 1742US9856579B2Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyLEIBIGER GUNNAR·Filed 2011·Granted Jan 2, 2018·0 cites·11 claims
- 1842US2007141814A1Process for producing a free-standing iii-n layer, and free-standing iii-n substrateFREIBERGER COMPOUND MAT GMBH·Filed 2006·Application pending·0 cites
- 1937US2006060833A1Radiation-emitting optoelectronic component with a quantum well structure and method for producing itOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2005·Application pending·0 cites
- 2037US2019137248A1Stun grenade and method for production thereofRHEINMETALL WAFFE MUNlTION GMBH·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →