Inventor · disambiguated record
Fumitaka Arai
Also filed as: ARAI FUMITAKA
202 granted patents·37 pending applications·3,753 citations·filing 1998–2025
99Inventor score
Top patents by PatentIndex Score
239 records- 0199US10074667B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Sep 11, 2018·162 cites·20 claims
- 0299US8044448B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2009·Granted Oct 25, 2011·227 cites·7 claims
- 0399US8008732B2Semiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Aug 30, 2011·244 cites·20 claims
- 0499US7696559B2Semiconductor memory device including pillar-shaped semiconductor layers and a method of fabricating the sameTOSHIBA KK·Filed 2006·Granted Apr 13, 2010·221 cites·15 claims
- 0599US6134140ANonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cellsTOSHIBA KK·Filed 1998·Granted Oct 17, 2000·262 cites·24 claims
- 0698US6859394B2NAND type non-volatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Feb 22, 2005·140 cites·26 claims
- 0798US6798698B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Sep 28, 2004·106 cites·24 claims
- 0898US6549464B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Apr 15, 2003·92 cites·8 claims
- 0997US8148216B2Nonvolatile semiconductor memory and process of producing the sameARAI FUMITAKA·Filed 2010·Granted Apr 3, 2012·35 cites·3 claims
- 1097US7884417B2Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage deviceTOSHIBA KK·Filed 2008·Granted Feb 8, 2011·56 cites·11 claims
- 1197US7796439B2Semiconductor memory device and write method thereofTOSHIBA KK·Filed 2008·Granted Sep 14, 2010·61 cites·22 claims
- 1297US6222225B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Apr 24, 2001·176 cites·9 claims
- 1396US11374015B2Semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted Jun 28, 2022·3 cites·18 claims
- 1496US8048741B2Semiconductor memory device and method of fabricating the sameTOSHIBA KK·Filed 2010·Granted Nov 1, 2011·26 cites·3 claims
- 1596US7875922B2Nonvolatile semiconductor memory and process of producing the sameTOSHIBA KK·Filed 2007·Granted Jan 25, 2011·39 cites·17 claims
- 1696US6859395B2NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltagesTOSHIBA KK·Filed 2003·Granted Feb 22, 2005·106 cites·41 claims
- 1796US6493265B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Dec 10, 2002·96 cites·15 claims
- 1896US6208560B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Mar 27, 2001·73 cites·2 claims
- 1995US10056433B2Semiconductor memory and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Aug 21, 2018·7 cites·18 claims
- 2095US10043808B1Semiconductor memoryTOSHIBA MEMORY CORP·Filed 2017·Granted Aug 7, 2018·21 cites·19 claims
- 2194US11101325B2Semiconductor memory and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Aug 24, 2021·5 cites·18 claims
- 2294US10763272B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Sep 1, 2020·7 cites·21 claims
- 2394US10276586B2Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 30, 2019·11 cites·13 claims
- 2494US10242992B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 26, 2019·8 cites·11 claims
- 2594US10236254B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Mar 19, 2019·10 cites·8 claims
- 2694US10020315B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Jul 10, 2018·9 cites·10 claims
- 2794US9431412B1Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Aug 30, 2016·14 cites·17 claims
- 2894US7092294B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Aug 15, 2006·26 cites·7 claims
- 2994US6434055B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2001·Granted Aug 13, 2002·52 cites·21 claims
- 3093US7026684B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Apr 11, 2006·81 cites·20 claims
- 3193US6314026B1Nonvolatile semiconductor device using local self boost techniqueTOSHIBA KK·Filed 2000·Granted Nov 6, 2001·65 cites·13 claims
- 3292US10312239B2Semiconductor memory including semiconductor oxieTOSHIBA MEMORY CORP·Filed 2017·Granted Jun 4, 2019·13 cites·9 claims
- 3392US9847342B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2016·Granted Dec 19, 2017·10 cites·9 claims
- 3492US8223558B2Nonvolatile semiconductor memory deviceTANAKA TOMOHARU·Filed 2011·Granted Jul 17, 2012·9 cites·25 claims
- 3592US7977733B2Non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2009·Granted Jul 12, 2011·15 cites·17 claims
- 3692US7528046B2Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted May 5, 2009·19 cites·9 claims
- 3792US7332766B2Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gateTOSHIBA KK·Filed 2005·Granted Feb 19, 2008·28 cites·7 claims
- 3892US6930921B2NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltagesTOSHIBA KK·Filed 2004·Granted Aug 16, 2005·56 cites·14 claims
- 3991US8022464B2Semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted Sep 20, 2011·16 cites·14 claims
- 4091US7781807B2Non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2007·Granted Aug 24, 2010·21 cites·7 claims
- 4191US7292474B2Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2006·Granted Nov 6, 2007·18 cites·17 claims
- 4290US9761606B1Stacked non-volatile semiconductor memory device with buried source line and method of manufactureTOSHIBA MEMORY CORP·Filed 2016·Granted Sep 12, 2017·8 cites·19 claims
- 4390US6784503B2Non-volatile semiconductor memory device having memory cell array suitable for high density and high integrationTOSHIBA KK·Filed 2001·Granted Aug 31, 2004·39 cites·23 claims
- 4489US10103155B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Oct 16, 2018·6 cites·21 claims
- 4589US7539055B2Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted May 26, 2009·15 cites·6 claims
- 4689US7387934B2Nonvolatile semiconductor memory and manufacturing method for the sameTOSHIBA KK·Filed 2005·Granted Jun 17, 2008·13 cites·14 claims
- 4789US7122430B2Nonvolatile semiconductor memory and manufacturing method for the sameTOSHIBA KK·Filed 2005·Granted Oct 17, 2006·15 cites·3 claims
- 4889US6878985B2Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrodeTOSHIBA KK·Filed 2003·Granted Apr 12, 2005·37 cites·7 claims
- 4988US10868037B2Non-volatile semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 5088US9257443B1Memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Feb 9, 2016·6 cites·15 claims
Showing the top 50 of 239 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →