Inventor · disambiguated record
Fu-Yu Chu
Also filed as: CHU FU-YU
29 granted patents·4 pending applications·46 citations·filing 2012–2025
95Inventor score
Top patents by PatentIndex Score
33 records- 0199US11088085B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·6 cites·20 claims
- 0291US11107899B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·2 cites·20 claims
- 0391US8664718B2Power MOSFETs and methods for forming the sameCHENG CHIH-CHANG·Filed 2012·Granted Mar 4, 2014·12 cites·20 claims
- 0491US2025357364A1A novel layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0588US10658482B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·3 cites·20 claims
- 0688US9000517B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·6 cites·20 claims
- 0785US9917212B1JFET structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·4 cites·20 claims
- 0885US9466715B2MOS transistor having a gate dielectric with multiple thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 11, 2016·6 cites·8 claims
- 0984US12469798B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 1083US2024371966A1Mehtod of making triple well isolated diode and triple well isolated diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1179US10714432B1Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·1 cites·20 claims
- 1278US2023378296A1Semiconductor device having multiple wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1376US11923429B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 1476US11817396B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 1573US11769812B2Semiconductor device having multiple wells and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 1671US11011610B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 1771US9583610B2Transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·1 cites·20 claims
- 1870US9356139B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·1 cites·20 claims
- 1969US10205024B2Semiconductor structure having field plate and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 12, 2019·1 cites·20 claims
- 2069US9159827B2Transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 13, 2015·1 cites·20 claims
- 2168US9520467B1Field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·1 cites·20 claims
- 2264US12074208B2Method of making triple well isolated diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 27, 2024·0 cites·20 claims
- 2361US9472665B2MOS transistor and method for manufacturing MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 18, 2016·1 cites·17 claims
- 2460US11158739B2Semiconductor structure having field plate and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
- 2560US10957772B2Semiconductor device having multiple wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·0 cites·20 claims
- 2659US10038090B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·0 cites·20 claims
- 2758US9917168B2Metal oxide semiconductor field effect transistor having variable thickness gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 13, 2018·0 cites·20 claims
- 2857US9601616B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·0 cites·20 claims
- 2956US10497795B2Triple well isolated diode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 3, 2019·0 cites·20 claims
- 3054US8796760B2Transistor and method of manufacturing the sameCHENG CHIH-CHANG·Filed 2012·Granted Aug 5, 2014·0 cites·20 claims
- 3153US9391159B2Triple well isolated diode and method of makingCHENG CHIH-CHANG·Filed 2012·Granted Jul 12, 2016·0 cites·20 claims
- 3251US2024371926A1Semiconductor device with enhanced avalanche ruggednessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3347US9583618B2Metal oxide semiconductor field effect transistor having asymmetric lightly doped drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 28, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →