Inventor · disambiguated record
Fumihiko Hayashi
Also filed as: HAYASHI FUMIHIKO
20 granted patents·3 pending applications·347 citations·filing 1985–2022
95Inventor score
Top patents by PatentIndex Score
23 records- 0190US5780909ASemiconductor memory device with a two-layer top gateNEC CORP·Filed 1997·Granted Jul 14, 1998·118 cites·16 claims
- 0286US4702958ALaser recording filmDAICEL CHEM·Filed 1985·Granted Oct 27, 1987·35 cites·6 claims
- 0379US5536960AVLSIC semiconductor memory device with cross-coupled inverters with improved stability to errorsNEC CORP·Filed 1994·Granted Jul 16, 1996·47 cites·5 claims
- 0478US11502036B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Nov 15, 2022·1 cites·15 claims
- 0577US5973369ASRAM having P-channel TFT as load element with less series-connected high resistanceNEC CORP·Filed 1997·Granted Oct 26, 1999·42 cites·11 claims
- 0672US8207572B2Nonvolatile semiconductor memory deviceMIZUSHIMA HIROAKI·Filed 2010·Granted Jun 26, 2012·4 cites·14 claims
- 0771US7928491B2Semiconductor memory device having reference transistor and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2006·Granted Apr 19, 2011·5 cites·11 claims
- 0868US11798886B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2022·Granted Oct 24, 2023·0 cites·12 claims
- 0966US8298900B2Nonvolatile semiconductor storage device with charge storage layer and its manufacturing methodHAYASHI FUMIHIKO·Filed 2011·Granted Oct 30, 2012·3 cites·6 claims
- 1065US7999306B2Nonvolatile semiconductor storage device with charge storage layer and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2009·Granted Aug 16, 2011·3 cites·20 claims
- 1163US6849490B2Semiconductor device having a memory cell region and a peripheral circuit region and method of manufacturing thereofNEC ELECTRONICS CORP·Filed 2001·Granted Feb 1, 2005·12 cites·13 claims
- 1251US5334863ASemiconductor memory device having a meshlike grounding wiringNEC CORP·Filed 1992·Granted Aug 2, 1994·16 cites·8 claims
- 1350US5331170AStatic type random access memory device with stacked memory cell free from parasitic diodeNEC CORP·Filed 1992·Granted Jul 19, 1994·16 cites·6 claims
- 1448US2009224306A1Nonvolatile semiconductor storage device with charge storage layer and its manufacturing methodNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 1547US6093597ASRAM having P-channel TFT as load element with less series-connected high resistanceNEC CORP·Filed 1998·Granted Jul 25, 2000·10 cites·10 claims
- 1646US6178110B1Static semiconductor memory device capable of enhancing access speedNEC CORP·Filed 1998·Granted Jan 23, 2001·8 cites·14 claims
- 1746US5965905AThin-film transistor and SRAM memory cell equipped therewithNEC CORP·Filed 1997·Granted Oct 12, 1999·11 cites·4 claims
- 1843US6917071B2Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacture method of the deviceNEC CORP·Filed 2003·Granted Jul 12, 2005·2 cites·14 claims
- 1940US5776804AProcess of fabricating semiconductor device having non-single crystal thin film transistor free from residual hydrogen left therein during hydrogen treatment stageNEC CORP·Filed 1996·Granted Jul 7, 1998·9 cites·13 claims
- 2034US6268240B1Static semiconductor memory device capable of enhancing access speedNEC·Filed 1999·Granted Jul 31, 2001·3 cites·10 claims
- 2133US2001003366A1Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacuture method of the deviceFiled 2000·Application pending·0 cites
- 2231US2003119262A1Method for manufacturing non-volatile semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 2329US5940715AMethod for manufacturing semiconductor deviceNEC CORP·Filed 1997·Granted Aug 17, 1999·2 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →