Inventor · disambiguated record
Fumio Horiguchi
Also filed as: HORIGUCHI FUMIO
33 granted patents·1 pending application·1,849 citations·filing 1983–2004
98Inventor score
Top patents by PatentIndex Score
34 records- 0199US6548848B2Semiconductor memory deviceTOSHIBA KK·Filed 2001·Granted Apr 15, 2003·260 cites·26 claims
- 0298US5258635AMOS-type semiconductor integrated circuit deviceTOSHIBA KK·Filed 1991·Granted Nov 2, 1993·249 cites·14 claims
- 0398US4800530ASemiconductor memory system with dynamic random access memory cellsKABUSHIKI KASIHA TOSHIBA·Filed 1987·Granted Jan 24, 1989·172 cites·11 claims
- 0496US7042040B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 9, 2006·93 cites·11 claims
- 0595US5371024ASemiconductor device and process for manufacturing the sameTOSHIBA KK·Filed 1992·Granted Dec 6, 1994·128 cites·22 claims
- 0695US4979014AMOS transistorTOSHIBA KK·Filed 1988·Granted Dec 18, 1990·183 cites·11 claims
- 0793US6891225B2Dynamic semiconductor memory deviceTOSHIBA KK·Filed 2001·Granted May 10, 2005·83 cites·10 claims
- 0890US5477071AMOS random access memory having array of trench type one-capacitor/one-transistor memory cellsTOSHIBA KK·Filed 1995·Granted Dec 19, 1995·58 cites·17 claims
- 0988US5895946AMOS random access memory having array of trench type one-capacitor/one-transistor memory cellsTOSHIBA KK·Filed 1998·Granted Apr 20, 1999·48 cites·3 claims
- 1085US5731609AMOS random access memory having array of trench type one-capacitor/one-transistor memory cellsTOSHIBA KK·Filed 1997·Granted Mar 24, 1998·41 cites·6 claims
- 1185US5235199ASemiconductor memory with pad electrode and bit line under stacked capacitorTOSHIBA KK·Filed 1992·Granted Aug 10, 1993·48 cites·7 claims
- 1285US5138412ADynamic ram, having an improved large capacitanceTOSHIBA KK·Filed 1991·Granted Aug 11, 1992·65 cites·12 claims
- 1380US5363325ADynamic semiconductor memory device having high integration densityTOSHIBA KK·Filed 1992·Granted Nov 8, 1994·46 cites·17 claims
- 1478US5387532ASemiconductor memory having capacitor electrode formed above bit lineTOSHIBA KK·Filed 1993·Granted Feb 7, 1995·35 cites·10 claims
- 1577US4799193ASemiconductor memory devicesTOSHIBA KK·Filed 1986·Granted Jan 17, 1989·33 cites·33 claims
- 1676US5561311ASemiconductor memory with insulation film embedded in groove formed on substrateTOSHIBA KK·Filed 1994·Granted Oct 1, 1996·31 cites·9 claims
- 1776US4992389AMaking a self aligned semiconductor deviceTOSHIBA KK·Filed 1988·Granted Feb 12, 1991·36 cites·1 claims
- 1874US5049957AMOS type dynamic random access memoryTOSHIBA KK·Filed 1990·Granted Sep 17, 1991·32 cites·11 claims
- 1969US5350708AMethod of making dynamic random access semiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Sep 27, 1994·23 cites·3 claims
- 2065US5250830ADynamic type semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 1991·Granted Oct 5, 1993·20 cites·10 claims
- 2164US5043298AProcess for manufacturing a DRAM cellTOSHIBA KK·Filed 1990·Granted Aug 27, 1991·23 cites·14 claims
- 2263US5106774AMethod of making trench type dynamic random access memory deviceTOSHIBA KK·Filed 1991·Granted Apr 21, 1992·22 cites·13 claims
- 2363US4505025AMethod for manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 19, 1985·25 cites·21 claims
- 2462US7075820B2Semiconductor memory device for dynamically storing data with channel body of transistor used as storage nodeTOSHIBA KK·Filed 2004·Granted Jul 11, 2006·9 cites·19 claims
- 2559US7042753B2Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elementsTOSHIBA KK·Filed 2002·Granted May 9, 2006·10 cites·20 claims
- 2659US4628488ASemiconductor memory device with a refresh mechanismTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Dec 9, 1986·16 cites·10 claims
- 2754US6232822B1Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanismTOSHIBA KK·Filed 1994·Granted May 15, 2001·13 cites·12 claims
- 2846US4641280AHigh-density semiconductor memory device with charge-coupling memory cellsTOSHIBA KK·Filed 1984·Granted Feb 3, 1987·6 cites·9 claims
- 2945US5488242ASemiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Jan 30, 1996·13 cites·11 claims
- 3042US5202751ASemiconductor integrated circuitTOSHIBA KK·Filed 1992·Granted Apr 13, 1993·12 cites·27 claims
- 3137US6292390B1Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Sep 18, 2001·0 cites·12 claims
- 3237US5227319AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1991·Granted Jul 13, 1993·7 cites·7 claims
- 3336US2002030214A1Semiconductor device and method for manufacturing the sameFiled 2001·Application pending·0 cites
- 3435US4831433ASemiconductor deviceTOSHIBA KK·Filed 1988·Granted May 16, 1989·9 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →