Inventor · disambiguated record
Fumimasa Horikiri
Also filed as: HORIKIRI FUMIMASA
52 granted patents·11 pending applications·24 citations·filing 2011–2022
96Inventor score
Top patents by PatentIndex Score
63 records- 0187US10978296B2Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminateSCIOCS CO LTD·Filed 2018·Granted Apr 13, 2021·4 cites·9 claims
- 0286US8446074B2Piezoelectric thin-film element and piezoelectric thin-film deviceSHIBATA KENJI·Filed 2011·Granted May 21, 2013·3 cites·10 claims
- 0382US11342220B2Structure manufacturing method and manufacturing device, and light irradiation deviceSCIOCS CO LTD·Filed 2019·Granted May 24, 2022·2 cites·19 claims
- 0481US8896187B2Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film deviceSUENAGA KAZUFUMI·Filed 2012·Granted Nov 25, 2014·4 cites·12 claims
- 0580US10497855B2Ferroelectric thin-film laminated substrate, ferroelectric thin-film device, and manufacturing method of ferroelectric thin-film laminated substrateSUMITOMO CHEMICAL CO·Filed 2016·Granted Dec 3, 2019·1 cites·8 claims
- 0678US10199564B2Method for manufacturing niobate-system ferroelectric thin-film deviceSUMITOMO CHEMICAL CO·Filed 2016·Granted Feb 5, 2019·2 cites·9 claims
- 0773US11380765B2Structure and intermediate structureSCIOCS CO LTD·Filed 2019·Granted Jul 5, 2022·1 cites·7 claims
- 0872US11756827B2Structure manufacturing method and manufacturing device, and light irradiation deviceSUMITOMO CHEMICAL CO·Filed 2022·Granted Sep 12, 2023·0 cites·3 claims
- 0972US10658569B2Method for manufacturing niobate-system ferroelectric thin-film deviceSUMITOMO CHEMICAL CO·Filed 2018·Granted May 19, 2020·0 cites·9 claims
- 1072US9293688B2Piezoelectric element and piezoelectric deviceHITACHI CABLE·Filed 2013·Granted Mar 22, 2016·2 cites·19 claims
- 1171US11557713B2Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrateSUMITOMO CHEMICAL CO·Filed 2018·Granted Jan 17, 2023·1 cites·3 claims
- 1270US9893266B2Piezoelectric film element, and piezoelectric film device including piezoelectric film including alkali niobate-based perovskite structureSUMITOMO CHEMICAL CO·Filed 2016·Granted Feb 13, 2018·1 cites·6 claims
- 1370US9685603B2Method for manufacturing niobate-system ferroelectric thin film deviceSUMITOMO CHEMICAL CO·Filed 2016·Granted Jun 20, 2017·1 cites·16 claims
- 1469US2023115136A1Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrateSUMITOMO CHEMICAL CO·Filed 2022·Application pending·0 cites
- 1567US11107971B2Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this elementSCIOCS CO LTD·Filed 2016·Granted Aug 31, 2021·0 cites·6 claims
- 1666US12104279B2Nitride crystal substrate and method for manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2022·Granted Oct 1, 2024·0 cites·5 claims
- 1765US12408556B2Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stackSUMITOMO CHEMICAL CO·Filed 2019·Granted Sep 2, 2025·0 cites·8 claims
- 1865US11732380B2Nitride crystal substrate and method for manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2019·Granted Aug 22, 2023·0 cites·13 claims
- 1962US9368713B2Piezoelectric film-attached substrate, piezoelectric film element and method of manufacturing the sameHITACHI CABLE·Filed 2013·Granted Jun 14, 2016·1 cites·9 claims
- 2060US9166142B2Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric deviceHORIKIRI FUMIMASA·Filed 2012·Granted Oct 20, 2015·1 cites·3 claims
- 2159US11377756B2Nitride crystal substrate and method for manufacturing the sameSCIOCS CO LTD·Filed 2019·Granted Jul 5, 2022·0 cites·3 claims
- 2257US12306130B2Electrochemical sensor unit, electrode for electrochemical sensor, and method of manufacturing electrode for electrochemical sensorSUMITOMO CHEMICAL CO·Filed 2020·Granted May 20, 2025·0 cites·10 claims
- 2356US11367826B2Piezoelectric laminate, method of manufacturing the piezoelectric laminate and piezoelectric deviceSUMITOMO CHEMICAL CO·Filed 2019·Granted Jun 21, 2022·0 cites·10 claims
- 2455US10665683B2GaN material and method of manufacturing semiconductor deviceSCIOCS CO LTD·Filed 2019·Granted May 26, 2020·0 cites·13 claims
- 2555US9385297B2Method for manufacturing niobate-system ferroelectric thin film deviceSUMITOMO CHEMICAL CO·Filed 2014·Granted Jul 5, 2016·0 cites·13 claims
- 2655US2023099777A1Production apparatus for producing structural body and production method for producing structural bodySCIOCS CO LTD·Filed 2022·Application pending·0 cites
- 2754US12283487B2Method for manufacturing structureSUMITOMO CHEMICAL CO·Filed 2020·Granted Apr 22, 2025·0 cites·16 claims
- 2854US12054847B2Method and device for manufacturing structureSUMITOMO CHEMICAL CO·Filed 2020·Granted Aug 6, 2024·0 cites·20 claims
- 2954US11744159B2Piezoelectric laminate, method of manufacturing piezoelectric laminate and piezoelectric elementSUMITOMO CHEMICAL CO·Filed 2019·Granted Aug 29, 2023·0 cites·5 claims
- 3054US10276777B2Ferroelectric thin-film laminated substrate, ferroelectric thin-film device,and manufacturing method of ferroelectric thin-film laminated substrateSUMITOMO CHEMICAL CO·Filed 2016·Granted Apr 30, 2019·0 cites·8 claims
- 3152US11805700B2Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrateSUMITOMO CHEMICAL CO·Filed 2018·Granted Oct 31, 2023·0 cites·12 claims
- 3251US12002880B2Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistorSUMITOMO CHEMICAL CO·Filed 2021·Granted Jun 4, 2024·0 cites·17 claims
- 3351US11339500B2Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor deviceSCIOCS CO LTD·Filed 2018·Granted May 24, 2022·0 cites·21 claims
- 3451US9620703B2Piezoelectric thin-film element, piezoelectric sensor and vibration generatorSUMITOMO CHEMICAL CO·Filed 2014·Granted Apr 11, 2017·0 cites·20 claims
- 3550US11393693B2Structure manufacturing method and intermediate structureSCIOCS CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·23 claims
- 3649US12166086B2Epitaxial substrateSUMITOMO CHEMICAL CO·Filed 2019·Granted Dec 10, 2024·0 cites·3 claims
- 3749US11946874B2Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth deviceSUMITOMO CHEMICAL CO·Filed 2019·Granted Apr 2, 2024·0 cites·10 claims
- 3848US10998188B2Gallium nitride laminated substrate and semiconductor deviceUNIV HOSEI·Filed 2019·Granted May 4, 2021·0 cites·13 claims
- 3948US2023343597A1Structure manufacturing method and structure manufacturing apparatusSUMITOMO CHEMICAL CO·Filed 2021·Application pending·0 cites
- 4047US11640906B2Crystal laminate, semiconductor device and method for manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2018·Granted May 2, 2023·0 cites·15 claims
- 4147US2014042875A1Piezoelectric element, piezoelectric device and method of manufacturing piezoelectric elementSUENAGA KAZUFUMI·Filed 2013·Application pending·0 cites
- 4247US2022384614A1Semiconductor device and method for manufacturing structureSCIOCS CO LTD·Filed 2020·Application pending·0 cites
- 4346US11094539B2Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrateSCIOCS CO LTD·Filed 2018·Granted Aug 17, 2021·0 cites·9 claims
- 4446US9406867B2Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film deviceHORIKIRI FUMIMASA·Filed 2011·Granted Aug 2, 2016·0 cites·14 claims
- 4546US9299911B2Piezoelectric thin-film multilayer bodyHITACHI METALS LTD·Filed 2014·Granted Mar 29, 2016·0 cites·9 claims
- 4646US2022285525A1Method for manufacturing structure, and structureSCIOCS CO LTD·Filed 2020·Application pending·0 cites
- 4746US2012304429A1Manufacturing methods of piezoelectric film element and piezoelectric deviceHORIKIRI FUMIMASA·Filed 2012·Application pending·0 cites
- 4845US11508629B2Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminateSCIOCS CO LTD·Filed 2017·Granted Nov 22, 2022·0 cites·14 claims
- 4945US10797181B2Semiconductor device and method for manufacturing the sameUNIV HOSEI·Filed 2017·Granted Oct 6, 2020·0 cites·15 claims
- 5044US11473907B2Method for manufacturing semiconductor structure, inspection method, and semiconductor structureSCIOCS CO LTD·Filed 2018·Granted Oct 18, 2022·0 cites·7 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →