Inventor · disambiguated record
Fu-Yuan Hsieh
Also filed as: HSIEH FU-YUAN
103 granted patents·56 pending applications·735 citations·filing 2007–2024
99Inventor score
Files withFORCE MOS TECHNOLOGY CO LTD59HSIEH FU-YUAN57NAMI MOS CO LTD34FORCE MOS TECH CO LTD5SOUN MIIN CO LTD2
Top patents by PatentIndex Score
159 records- 0198US8829607B1Fast switching super-junction trench MOSFETsFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Sep 9, 2014·42 cites·18 claims
- 0298US8067800B2Super-junction trench MOSFET with resurf step oxide and the method to make the sameHSIEH FU-YUAN·Filed 2009·Granted Nov 29, 2011·69 cites·18 claims
- 0397US9530882B1Trench MOSFET with shielded gate and diffused drift regionFORCE MOS TECH CO LTD·Filed 2015·Granted Dec 27, 2016·30 cites·17 claims
- 0496US11462638B2SiC super junction trench MOSFETNAMI MOS CO LTD·Filed 2020·Granted Oct 4, 2022·3 cites·7 claims
- 0596US8274113B1Trench MOSFET having shielded electrode integrated with trench Schottky rectifierHSIEH FU-YUAN·Filed 2011·Granted Sep 25, 2012·26 cites·20 claims
- 0695US8564058B1Super-junction trench MOSFET with multiple trenched gates in unit cellHSIEH FU-YUAN·Filed 2012·Granted Oct 22, 2013·18 cites·11 claims
- 0795US7816720B1Trench MOSFET structure having improved avalanche capability using three masks processFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Oct 19, 2010·35 cites·13 claims
- 0894US8653589B2Low Qgd trench MOSFET integrated with schottky rectifierHSIEH FU-YUAN·Filed 2011·Granted Feb 18, 2014·18 cites·9 claims
- 0994US8575690B1Super-junction trench MOSFET having deep trenches with buried voidsFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Nov 5, 2013·15 cites·11 claims
- 1094US8373225B2Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodesFORCE MOS TECHNOLOGY CO LTD·Filed 2011·Granted Feb 12, 2013·17 cites·21 claims
- 1193US9293527B1Super-junction trench MOSFET structureFORCE MOS TECHNOLOGY CO LTD·Filed 2015·Granted Mar 22, 2016·9 cites·8 claims
- 1293US9099320B2Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trenchFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Aug 4, 2015·12 cites·2 claims
- 1393US8680610B2Trench MOSFET having floating dummy cells for avalanche improvementHSIEH FU-YUAN·Filed 2011·Granted Mar 25, 2014·17 cites·20 claims
- 1492US8101993B2MSD integrated circuits with shallow trenchHSIEH FU-YUAN·Filed 2009·Granted Jan 24, 2012·23 cites·30 claims
- 1592US7897997B2Trench IGBT with trench gates underneath contact areas of protection diodesFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Mar 1, 2011·21 cites·21 claims
- 1692US7626231B1Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structuresFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Dec 1, 2009·21 cites·8 claims
- 1791US8723317B2Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks processHSIEH FU-YUAN·Filed 2012·Granted May 13, 2014·9 cites·11 claims
- 1891US8587054B2Trench MOSFET with resurf stepped oxide and diffused drift regionHSIEH FU-YUAN·Filed 2011·Granted Nov 19, 2013·12 cites·15 claims
- 1991US7989887B2Trench MOSFET with trenched floating gates as terminationFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Aug 2, 2011·20 cites·22 claims
- 2090US8653587B2Trench MOSFET having a top side drainHSIEH FU-YUAN·Filed 2012·Granted Feb 18, 2014·10 cites·14 claims
- 2190US8372717B2Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2011·Granted Feb 12, 2013·10 cites·10 claims
- 2290US8120106B2LDMOS with double LDD and trenched drainHSIEH FU-YUAN·Filed 2011·Granted Feb 21, 2012·8 cites·5 claims
- 2389US8487372B1Trench MOSFET layout with trenched floating gates and trenched channel stop gates in terminationFORCE MOS TECHNOLOGY CO LTD·Filed 2012·Granted Jul 16, 2013·10 cites·6 claims
- 2489US8058685B2Trench MOSFET structures using three masks processHSIEH FU-YUAN·Filed 2009·Granted Nov 15, 2011·12 cites·19 claims
- 2588US11380787B2Shielded gate trench MOSFET integrated with super barrier rectifier having short channelNAMI MOS CO LTD·Filed 2020·Granted Jul 5, 2022·2 cites·20 claims
- 2688US8378392B2Trench MOSFET with body region having concave-arc shapeFORCE MOS TECHNOLOGY CO LTD·Filed 2010·Granted Feb 19, 2013·10 cites·12 claims
- 2788US7791136B1Trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Sep 7, 2010·13 cites·11 claims
- 2887US8569780B2Semiconductor power device with embedded diodes and resistors using reduced mask processesHSIEH FU-YUAN·Filed 2011·Granted Oct 29, 2013·9 cites·5 claims
- 2987US8564047B2Semiconductor power devices integrated with a trenched clamp diodeHSIEH FU-YUAN·Filed 2011·Granted Oct 22, 2013·9 cites·14 claims
- 3087US8314000B2LDMOS with double LDD and trenched drainHSIEH FU-YUAN·Filed 2011·Granted Nov 20, 2012·6 cites·17 claims
- 3187US7816732B2Integrated trench MOSFET and Schottky rectifier with trench contact structureFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Oct 19, 2010·14 cites·12 claims
- 3286US8178922B2Trench MOSFET with ultra high cell density and manufacture thereofHSIEH FU-YUAN·Filed 2010·Granted May 15, 2012·8 cites·15 claims
- 3385US11444164B2Shielded gate trench MOSFET having improved specific on-resistance structuresNAMI MOS CO LTD·Filed 2020·Granted Sep 13, 2022·1 cites·8 claims
- 3484US8686468B2Semiconductor power device having wide termination trench and self-aligned source regions for mask savingFORCE MOS TECHNOLOGY CO LTD·Filed 2012·Granted Apr 1, 2014·6 cites·20 claims
- 3584US8564054B2Trench semiconductor power device having active cells under gate metal padHSIEH FU-YUAN·Filed 2011·Granted Oct 22, 2013·7 cites·24 claims
- 3684US8004009B2Trench MOSFETS with ESD Zener diodeFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Aug 23, 2011·10 cites·8 claims
- 3783US7956410B2Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortageFORCE MOS TECHNOLOGY CO LTD·Filed 2010·Granted Jun 7, 2011·6 cites·7 claims
- 3882US8652900B2Trench MOSFET with ultra high cell density and manufacture thereofHSIEH FU-YUAN·Filed 2012·Granted Feb 18, 2014·5 cites·8 claims
- 3982US8519477B2Trench MOSFET with trenched floating gates and trenched channel stop gates in terminationHSIEH FU-YUAN·Filed 2012·Granted Aug 27, 2013·6 cites·17 claims
- 4082US8466514B2Semiconductor power device integrated with improved gate source ESD clamp diodesHSIEH FU-YUAN·Filed 2011·Granted Jun 18, 2013·6 cites·12 claims
- 4182US7629634B2Trenched MOSFET with trenched source contactFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Dec 8, 2009·7 cites·9 claims
- 4281US8373224B2Super-junction trench MOSFET with resurf stepped oxides and trenched contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2011·Granted Feb 12, 2013·5 cites·24 claims
- 4381US8164162B2Power semiconductor devices integrated with clamp diodes sharing same gate metal padHSIEH FU-YUAN·Filed 2009·Granted Apr 24, 2012·9 cites·5 claims
- 4481US8034686B2Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2010·Granted Oct 11, 2011·5 cites·2 claims
- 4579US8253164B2Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contactsHSIEH FU-YUAN·Filed 2010·Granted Aug 28, 2012·4 cites·17 claims
- 4679US7936014B2Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradationFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted May 3, 2011·7 cites·6 claims
- 4778US8148773B2Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradationHSIEH FU-YUAN·Filed 2011·Granted Apr 3, 2012·4 cites·7 claims
- 4878US8030702B2Trenched MOSFET with guard ring and channel stopFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Oct 4, 2011·7 cites·8 claims
- 4978US7898026B2LDMOS with double LDD and trenched drainFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Mar 1, 2011·4 cites·16 claims
- 5077US9530867B2Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trenchFORCE MOS TECH CO LTD·Filed 2015·Granted Dec 27, 2016·2 cites·3 claims
Showing the top 50 of 159 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →